ART2K0PEGZ

Active - ART2K0PEG/OMP1230/TRAYDP
Description:
ART2K0PEG/OMP1230/TRAYDP
ART2K0PEGZ Specification
Product Attribute
Attribute Value
Transistor Type
LDMOS (Dual), Common Source
Current Rating (Amps)
1.4μA
Package / Case
OMP-1230-4G-1
Supplier Device Package
OMP-1230-4G-1
ART2K0PEGZ Description
The Ampleon ART2K0PEGZ is a high-performance RF power transistor designed for various applications in the telecommunications and industrial sectors. This device is part of Ampleon%27s extensive portfolio of RF power solutions, which are known for their efficiency, reliability, and advanced performance characteristics. Below is a detailed introduction to the ART2K0PEGZ, including its specifications and parameters.
### Overview
The ART2K0PEGZ is a LDMOS (Laterally Diffused Metal Oxide Semiconductor) power transistor that operates in the UHF (Ultra High Frequency) band. It is specifically designed for use in RF amplification applications, including base stations, industrial RF heating, and other high-frequency applications. The device is engineered to deliver high output power while maintaining excellent linearity and efficiency, making it suitable for modern communication systems.
### Key Features
1. High Output Power: The ART2K0PEGZ is capable of delivering a high output power level, making it ideal for applications that require robust signal amplification.
2. Wide Frequency Range: This transistor operates effectively across a wide frequency range, allowing it to be used in various RF applications.
3. High Efficiency: The device is designed to provide high efficiency, which reduces power consumption and thermal management requirements, leading to lower operating costs.
4. Excellent Linearity: The ART2K0PEGZ exhibits excellent linearity characteristics, which is crucial for maintaining signal integrity in communication systems.
5. Robust Thermal Performance: The transistor is designed to handle high thermal loads, ensuring reliable operation even in demanding environments.
6. Integrated Protection Features: The device includes built-in protection features to safeguard against over-voltage and over-temperature conditions, enhancing its reliability and longevity.
### Specifications
- Device Type: LDMOS RF Power Transistor
- Frequency Range: 470 MHz to 600 MHz
- Output Power (P_out): Up to 2000 W (typical)
- Gain (G): 18 dB (typical)
- Efficiency (η): 60% (typical)
- Drain-Source Voltage (V_DS): 50 V
- Gate-Source Voltage (V_GS): ±20 V
- Thermal Resistance (R_thJC): 0.15 °C/W (typical)
- Operating Temperature Range: -40 °C to +85 °C
- Package Type: Metal-ceramic package (typically in a flange mount configuration)
### Applications
The Ampleon ART2K0PEGZ is suitable for a wide range of applications, including:
- Telecommunications: Used in base stations for mobile communication systems, providing reliable RF amplification for signal transmission.
- Industrial RF Heating: Employed in industrial applications such as RF heating and plasma generation, where high power and efficiency are required.
- Broadcasting: Utilized in television and radio broadcasting transmitters to ensure strong signal coverage and quality.
- Military and Aerospace: Integrated into communication systems for military and aerospace applications, where performance and reliability are critical.
### Conclusion
The Ampleon ART2K0PEGZ is a powerful and versatile RF power transistor that meets the demands of high-performance applications across various industries. Its robust specifications, combined with its high output power, efficiency, and excellent linearity, make it an excellent choice for engineers and designers looking for reliable RF amplification solutions. Whether in telecommunications, industrial RF heating, or broadcasting, the ART2K0PEGZ provides the performance and reliability needed to ensure efficient operation in a wide range of applications.