MZ0912B50Y

Active - RF POWER BIPOLAR TRANSISTOR, 1-E
Description:
RF POWER BIPOLAR TRANSISTOR, 1-E
MZ0912B50Y Specification
Product Attribute
Attribute Value
Voltage - Collector Emitter Breakdown (Max)
20V
Frequency - Transition
1.215GHz
Noise Figure (dB Typ @ f)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Current - Collector (Ic) (Max)
3A
Operating Temperature
200 ℃ (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT443A