MR821
Active - DIODE GEN PURP 100V 5A P600
Description:
DIODE GEN PURP 100V 5A P600
MR821 Specification
Product Attribute
Attribute Value
Packaging
Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max)
100 V
Current - Average Rectified (Io)
5A
Voltage - Forward (Vf) (Max) @ If
1.2 V @ 5 A
Speed
Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)
300 ns
Current - Reverse Leakage @ Vr
10 μA @ 100 V
Mounting Type
Through Hole
Package / Case
P600, Axial
Supplier Device Package
P600
Operating Temperature - Junction
-50 ℃ ~ 150 ℃
MR821 Stock: 18170
5.0 / 5.0
2021-08-02 07:24
Felt marking on the packaging not very readable (confusion possible ) ! Without that, conform! Thank you seller!
2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we
2021-12-31 23:06
Good product and work correctly .
2021-07-09 02:45
Well received, not tested yet
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
France
