ESJA04-03A
Active - DIODE GEN PURP 3KV 1MA M1A
Description:
DIODE GEN PURP 3KV 1MA M1A
ESJA04-03A Specification
Product Attribute
Attribute Value
Voltage - DC Reverse (Vr) (Max)
3000 V
Current - Average Rectified (Io)
1mA
Voltage - Forward (Vf) (Max) @ If
12 V @ 10 mA
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
80 ns
Current - Reverse Leakage @ Vr
2 μA @ 3000 V
Mounting Type
Through Hole
Supplier Device Package
M1A
Operating Temperature - Junction
120 ℃ (Max)
ESJA04-03A Stock: 17940
5.0 / 5.0
2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we
2021-12-31 23:06
Good product and work correctly .
2021-07-09 02:45
Well received, not tested yet
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
Poland
