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Home  /  Discrete Semiconductors  /  Transistors - FETs, MOSFETs - Single  /  EPC EPC2016C

EPC2016C

Active Icon Active - GANFET N-CH 100V 18A DIE
EPC2016C
EPC2016C
EPC
Manufacturer:
Mfr Part #
Datasheet:
Description:
GANFET N-CH 100V 18A DIE
 
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EPC2016C Specification

Product Attribute
Attribute Value
Manufacturer
Series
eGaN
Packaging
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25℃
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id
2.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
4.5 nC @ 5 V
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Die
Package / Case
Die

EPC2016C Stock: 46035

History Price
$2.45000
Certificates
5.0 / 5.0
review stars
Author Icon
Éva Delaunay
Location Icon France
5 stars
2023-03-26 01:25
They arrived much faster than expected. All I have to do is ride them.
Author Icon
Jussara Costa Ferreira
Location Icon Brazil
5 stars
2023-03-24 07:14
Great product.
Already tested
Author Icon
Laura Salmi
Location Icon Finland
5 stars
2023-03-24 03:47
Simply excellent!!! Thank you.
Author Icon
Ville Räsänen
Location Icon Finland
5 stars
2022-12-19 19:44
The delivery did not arrive.
Author Icon
Asher King
Location Icon United States
5 stars
2023-03-25 13:19
Is like the description (Toshiba). Is the amount I asked for. Very quickly he sent. Not yet proven, I will put additional comment later.

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