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Home  /  Discrete Semiconductors  /  Transistors - FETs, MOSFETs - Single  /  Harris Corporation IRF520

IRF520

Active Icon Active - MOSFET N-CH 100V 9.2A TO220AB
IRF520
IRF520
Harris Corporation
Manufacturer:
Mfr Part #
Datasheet:
Description:
MOSFET N-CH 100V 9.2A TO220AB
 
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IRF520 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25℃
9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
270mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
?0V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3

IRF520 Description

The Harris Corporation IRF520 is a popular N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is widely used in various electronic applications, particularly in power switching and amplification. This device is known for its high efficiency, fast switching capabilities, and robust performance, making it suitable for a range of applications, including power supplies, motor control, and audio amplifiers. Below is a detailed overview of the IRF520, including its specifications, features, and applications.

### Overview

The IRF520 is designed to handle high voltages and currents, making it an ideal choice for applications that require efficient power management. As an N-channel MOSFET, it allows current to flow from the drain to the source when a positive voltage is applied to the gate. This characteristic enables the IRF520 to act as an electronic switch, controlling the flow of power in various circuits.

### Key Specifications

1. Maximum Drain-Source Voltage (V_DS):
- The IRF520 has a maximum drain-source voltage rating of 100V. This allows it to be used in high-voltage applications without the risk of breakdown.

2. Continuous Drain Current (I_D):
- The device can handle a continuous drain current of up to 9.2A at a temperature of 25°C. This capability makes it suitable for applications that require significant power handling.

3. Pulsed Drain Current (I_D, pulsed):
- The IRF520 can handle pulsed drain currents of up to 30A. This feature is particularly useful in applications where short bursts of high current are needed.

4. Gate Threshold Voltage (V_GS(th)):
- The gate threshold voltage is typically between 2V and 4V. This means that the MOSFET will start to conduct when the gate voltage exceeds this threshold, allowing for efficient control in low-voltage applications.

5. On-Resistance (R_DS(on)):
- The on-resistance is typically around 0.27 ohms at a gate-source voltage of 10V. A low on-resistance is crucial for minimizing power loss and heat generation during operation.

6. Total Gate Charge (Q_g):
- The total gate charge is approximately 67 nC at a gate-source voltage of 10V. This parameter is important for determining the switching speed and efficiency of the MOSFET in high-frequency applications.

7. Operating Temperature Range:
- The IRF520 is designed to operate over a wide temperature range, typically from -55°C to +170°C. This ensures reliability in various environmental conditions.

8. Package Type:
- The IRF520 is available in a TO-220 package, which provides good thermal performance and allows for easy mounting on heat sinks for improved heat dissipation.

### Features

- High Efficiency: The IRF520 is designed for low on-resistance, which results in minimal power loss and heat generation during operation.
- Fast Switching Speed: The device can switch on and off rapidly, making it suitable for high-frequency applications.
- Robust Performance: With its high voltage and current ratings, the IRF520 is capable of handling demanding applications without failure.
- Thermal Stability: The wide operating temperature range ensures that the MOSFET remains stable and reliable under varying conditions.

### Applications

The Harris Corporation IRF520 is suitable for a wide range of applications, including:

- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion and regulation.
- Motor Control: Employed in DC motor control circuits, allowing for precise speed and direction control.
- Audio Amplifiers: Utilized in audio amplifier circuits for driving speakers and other audio components.
- Lighting Control: Used in dimmer switches and LED drivers for controlling lighting levels.
- Switching Regulators: Integrated into buck and boost converters for efficient voltage regulation.

### Conclusion

The Harris Corporation IRF520 is a versatile and efficient N-channel MOSFET that meets the demands of various electronic applications. With its high voltage and current ratings, low on-resistance, and fast switching capabilities, it is an excellent choice for designers looking to create reliable and efficient power management solutions. Whether used in power supplies, motor control, or audio amplification, the IRF520 provides the performance and flexibility needed to support a wide range of designs.

IRF520 Stock: 20740

History Price
$0.33000
Certificates
5.0 / 5.0
review stars
Author Icon
Henrique Lima
Location Icon Brazil
5 stars
2020-06-10 18:19
Estir products I recommend foncionou perfect Great seller
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Valentina Rinaldi
Location Icon Italy
5 stars
2020-06-09 05:01
Quick in shipment and delivery.
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Zofia Czarnecka
Location Icon Poland
5 stars
2020-01-12 12:22
IGBT transistors not detected SA for testerach besde plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, transistors with scattered poj
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Prof. Klaus Bauer
Location Icon Germany
5 stars
2019-11-02 09:08
Received, delivery 1.5 month. Didn't check, hope OK.
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Júnior
Location Icon Brazil
5 stars
2019-11-22 04:21
Still not installed, but am happy with the purchase.

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