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Home  /  Integrated Circuits (ICs)  /  Memory  /  Infineon Technologies CY15V104QSN-108SXI

CY15V104QSN-108SXI

Active Icon Active - IC FRAM 4MBIT SPI/QUAD 8SOIC
CY15V104QSN-108SXI
CY15V104QSN-108SXI
Infineon Technologies
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Description:
IC FRAM 4MBIT SPI/QUAD 8SOIC
 
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CY15V104QSN-108SXI Specification

Product Attribute
Attribute Value
Category
Manufacturer
Series
Excelon-Ultra, F-RAM
Packaging
Tube
Product Status
Active
Memory Type
Non-Volatile
Memory Format
FRAM
Technology
FRAM (Ferroelectric RAM)
Memory Size
4Mbit
Memory Organization
512K x 8
Memory Interface
SPI - Quad I/O
Clock Frequency
108 MHz
Write Cycle Time - Word, Page
-
Access Time
-
Voltage - Supply
1.71V ~ 1.89V
Operating Temperature
-40 ℃ ~ 85 ℃ (TA)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.209", 5.30mm Width)
Supplier Device Package
8-SOIC

CY15V104QSN-108SXI Description

The Infineon Technologies CY15V104QSN-108SXI is a highly advanced and reliable Non-Volatile SRAM (nvSRAM) device that offers a combination of SRAM speed with non-volatile data retention, making it ideal for applications where rapid access to data and high data integrity are required. This component is typically used in embedded systems, industrial automation, automotive, and communication systems, where the loss of critical data due to power failure could result in significant operational issues. The CY15V104QSN-108SXI provides a seamless solution for data retention in the event of power loss, ensuring that critical data remains intact even during power-down scenarios.

### Key Specifications and Features:

* Memory Type: The CY15V104QSN-108SXI is a 4Mb (512K x 8-bit) Non-Volatile SRAM. This type of memory provides the speed and functionality of traditional SRAM while incorporating non-volatile elements to retain data without needing external power.

* Access Time: The device offers fast access times of 10 ns (nanoseconds), ensuring quick read and write operations. This speed is critical for applications requiring high throughput and minimal latency.

* Operating Voltage: The device operates with a core voltage range of 2.7V to 3.6V, which is typical for embedded systems and ensures compatibility with a variety of system power levels. The I/O voltage is 1.8V to 3.6V, which enables compatibility with modern low-voltage logic systems.

* Data Retention: The CY15V104QSN-108SXI offers a significant data retention period of 20 years after the loss of power. This is made possible by its non-volatile ferroelectric technology, which preserves data in memory cells without requiring continuous power, offering both high speed and persistence.

* Write Cycle Time: The device has a write cycle time of 10 ns as well, which is on par with the read access time. This means data can be written back into the memory quickly, ensuring minimal downtime for memory refresh and write operations.

* I/O Interface: The CY15V104QSN-108SXI supports an SPI (Serial Peripheral Interface) protocol, making it easy to integrate with a variety of microcontrollers and processors that support this standard. SPI enables high-speed serial communication with minimal wiring, making the device suitable for a wide range of applications.

* Package Type: The device comes in a 32-pin TSOP-II (Thin Small Outline Package) package. This compact package is ideal for space-constrained applications, such as embedded systems or small electronics, where PCB area is at a premium.

* Temperature Range: The CY15V104QSN-108SXI is designed to operate in a broad temperature range of -40°C to 85°C, making it suitable for industrial, automotive, and other harsh environments where temperature variations are common.

* Write Protection: The device features write protection, ensuring data integrity. It can be configured to prevent unintended writes, adding an extra layer of security in systems where the data needs to be preserved from corruption or overwriting.

* Power Consumption: The CY15V104QSN-108SXI is designed for low-power operation. It draws a low active current of typically 35 mA during read or write operations and a standby current of typically 4 µA when the device is idle. This low power consumption is beneficial in battery-operated applications.

* Endurance: The device features high endurance, capable of withstanding 1 million write cycles. This makes the CY15V104QSN-108SXI suitable for applications that require frequent updates to memory contents without compromising on longevity.

### Application Areas:

The CY15V104QSN-108SXI is ideal for applications that demand both high-speed data access and robust non-volatile storage. Some of the key application areas include:

* Industrial Automation: The device is well-suited for industrial systems where quick data access, along with long-term data retention, is critical. In situations like control systems or monitoring systems, the loss of data can lead to errors or downtime. This device ensures critical data is always available, even in the event of power loss.

* Automotive Systems: In automotive electronics, such as in engine control units (ECUs), navigation systems, and infotainment systems, data integrity is vital. The CY15V104QSN-108SXI provides non-volatile storage to prevent data corruption during sudden power outages, while maintaining high-speed access for real-time applications.

* Communication Systems: In communication infrastructure, the device is useful for storing configuration settings, status information, and operational data that must be preserved across power cycles without sacrificing performance.

* Consumer Electronics: For applications like gaming consoles, set-top boxes, and home automation systems, the CY15V104QSN-108SXI ensures that settings and user preferences are stored reliably, even during power interruptions.

* Embedded Systems: Ideal for embedded systems in various sectors, including medical devices, smart appliances, and robotics, where fast, reliable data storage is necessary for system stability.

### Summary:

The Infineon Technologies CY15V104QSN-108SXI is a versatile Non-Volatile SRAM solution, combining the high-speed performance of SRAM with the data retention capabilities of non-volatile memory. It offers fast read and write speeds, low power consumption, and long data retention, making it an excellent choice for a wide range of applications in industrial, automotive, communication, and embedded systems. Its robust design ensures reliability even in environments prone to power loss, while its small package size makes it ideal for space-constrained applications. The combination of these features positions the CY15V104QSN-108SXI as a leading choice for memory in mission-critical systems where data integrity and speed are paramount.

CY15V104QSN-108SXI Stock: 30300

History Price
$27.86000
Certificates
5.0 / 5.0
review stars
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Charles Reed
Location Icon United States
5 stars
2021-12-31 23:06
Good product and work correctly .
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Quentin Giraud
Location Icon France
5 stars
2021-07-09 02:45
Well received, not tested yet
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Jukka Laakso
Location Icon Finland
5 stars
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
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Kęstutis Darius
Location Icon Lithuania
5 stars
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
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Justine Perrin
Location Icon France
5 stars
2021-06-10 07:32
Recu in 89 days, strip, to test

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