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Home  /  Discrete Semiconductors  /  Transistors - FETs, MOSFETs - Single  /  Infineon Technologies IPP80P04P4L06AKSA1

IPP80P04P4L06AKSA1

Active Icon Obsolete - MOSFET P-CH 40V 80A TO220-3
IPP80P04P4L06AKSA1
IPP80P04P4L06AKSA1
Infineon Technologies
Manufacturer:
Mfr Part #
Datasheet:
Description:
MOSFET P-CH 40V 80A TO220-3
 
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IPP80P04P4L06AKSA1 Specification

Product Attribute
Attribute Value
Manufacturer
Series
Automotive, AEC-Q101, OptiMOS
Packaging
Bulk or Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25℃
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2.2V @ 150μA
Gate Charge (Qg) (Max) @ Vgs
104 nC @ 10 V
Vgs (Max)
+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds
6580 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3

IPP80P04P4L06AKSA1 Description

Introduction to Infineon Technologies IPP80P04P4L06AKSA1

The IPP80P04P4L06AKSA1 is a high-performance P-channel MOSFET manufactured by Infineon Technologies. Designed for power management applications, this component is particularly suitable for use in automotive, industrial, and consumer electronics. The MOSFET's combination of high voltage ratings, low on-resistance, and fast switching capabilities make it an ideal choice for various applications that require efficient power control.

Key Specifications

The IPP80P04P4L06AKSA1 comes with a range of specifications that define its performance characteristics:

- Type: P-channel MOSFET
- Maximum Drain-Source Voltage (Vds): -40 V
- Maximum Gate-Source Voltage (Vgs): ±20 V
- Continuous Drain Current (Id): -80 A at Tj = 25°C
- Pulsed Drain Current (Id,pulse): -320 A
- On-Resistance (Rds(on)): 0.025 Ω at Vgs = -10 V
- Total Gate Charge (Qg): 60 nC at Vgs = -10 V
- Thermal Resistance, Junction-to-Case (RthJC): 0.5 °C/W
- Operating Temperature Range: -55°C to +175°C

Physical Characteristics

The physical design of the IPP80P04P4L06AKSA1 contributes to its thermal performance and reliability:

- Package Type: TO-220
- Dimensions: The TO-220 package typically measures approximately 10.16 mm x 4.6 mm x 15.24 mm, allowing for efficient heat dissipation.

This package type is favored in high-power applications due to its ability to handle significant thermal loads while providing easy mounting options.

Applications

The versatility of the IPP80P04P4L06AKSA1 makes it suitable for various applications across different sectors:

1. Power Management Circuits: This MOSFET is widely used in DC-DC converters and power supplies where efficient switching is essential.

2. Automotive Applications: Its robust specifications allow it to function effectively in automotive power distribution systems, including battery management systems and motor control.

3. Industrial Control Systems: The IPP80P04P4L06AKSA1 can be found in industrial automation systems where reliable switching and efficiency are critical.

4. Consumer Electronics: It is also used in consumer devices such as televisions and computer peripherals where power efficiency and compact design are important.

Performance Characteristics

The performance characteristics of the IPP80P04P4L06AKSA1 are crucial for its effectiveness in electronic designs:

- Low On-State Resistance (Rds(on)): The low Rds(on) value minimizes conduction losses during operation, making it highly efficient for power applications.

- High Switching Speed: The total gate charge specification indicates that the device can switch quickly between on and off states, which is essential for high-frequency applications.

- Thermal Performance: With a low thermal resistance rating, this MOSFET can efficiently dissipate heat, allowing it to operate safely under heavy load conditions.

Conclusion

In summary, the Infineon Technologies IPP80P04P4L06AKSA1 P-channel MOSFET is a highly capable component designed for demanding power management applications. Its robust specifications, including high current handling capacity and low on-resistance, make it suitable for a wide range of uses across automotive, industrial, and consumer electronics sectors. The combination of efficient thermal performance and fast switching capabilities ensures that the IPP80P04P4L06AKSA1 remains a reliable choice for engineers looking to optimize their designs for performance and efficiency.

IPP80P04P4L06AKSA1 Stock: 28280

History Price
Obsolete
Certificates
5.0 / 5.0
review stars
Author Icon
Léonie Caron
Location Icon France
5 stars
2021-08-02 07:24
Felt marking on the packaging not very readable (confusion possible ) ! Without that, conform! Thank you seller!
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Danuta Krawczyk
Location Icon Poland
5 stars
2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we
Author Icon
Charles Reed
Location Icon United States
5 stars
2021-12-31 23:06
Good product and work correctly .
Author Icon
Quentin Giraud
Location Icon France
5 stars
2021-07-09 02:45
Well received, not tested yet
Author Icon
Jukka Laakso
Location Icon Finland
5 stars
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.

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