IRF5810

The Infineon Technologies IRF5810 is a high-voltage, N-channel power MOSFET designed for high-speed switching applications in power electronics and industrial systems. It combines low on-resistance with high voltage capability, making it suitable for switching power supplies, DC-DC converters, motor control, and load switching applications. The device offers robust avalanche energy handling, fast switching performance, and low gate charge, supporting efficient and reliable operation in demanding environments.

## Key Features

* N-channel MOSFET with high-voltage rating
* Drain-source voltage (V_DS): 100 V
* Continuous drain current (I_D): 29 A at 25°C
* Pulsed drain current (I_DM): 116 A typical
* Low on-resistance (R_DS(on)): 0.022 Ω typical at V_GS = 10 V
* Gate threshold voltage (V_GS(th)): 2–4 V
* Total gate charge (Q_G): 85 nC typical
* Fast switching for high-frequency applications
* Avalanche energy capability for inductive load protection
* Junction temperature range: -55°C to +175°C
* Logic-level compatible gate drive options
* TO-220 package with efficient thermal performance
* Applications: DC-DC converters, power management, motor drives, load switches, industrial automation

## Electrical Characteristics

* Drain-Source Voltage (V_DS): 100 V maximum
* Continuous Drain Current (I_D): 29 A at 25°C, derated with temperature
* Pulsed Drain Current (I_DM): 116 A typical
* Gate-Source Voltage (V_GS): ±20 V maximum
* Gate Threshold Voltage (V_GS(th)): 2.0–4.0 V
* On-Resistance (R_DS(on)): 0.022 Ω typical at V_GS = 10 V, I_D = 16 A
* Input Capacitance (C_iss): 820 pF typical
* Output Capacitance (C_oss): 330 pF typical
* Reverse Transfer Capacitance (C_rss): 70 pF typical
* Total Gate Charge (Q_G): 85 nC typical at V_DS = 80 V, V_GS = 10 V, I_D = 29 A
* Turn-On Delay Time (t_d(on)): 35 ns typical
* Rise Time (t_r): 50 ns typical
* Turn-Off Delay Time (t_d(off)): 95 ns typical
* Fall Time (t_f): 60 ns typical
* Drain-Source Leakage Current (I_DSS): 1 μA maximum at V_DS = 100 V, V_GS = 0 V
* Power Dissipation (P_D): 160 W at 25°C (with heatsink)
* Thermal Resistance, Junction-to-Case (RthJC): 0.75 K/W typical
* Avalanche Energy (E_AS): 150 mJ typical, single pulse

## Functional Description

The IRF5810 is a high-current, low R_DS(on) N-channel MOSFET suitable for applications requiring rapid switching and efficient conduction. It is optimized for high-speed power conversion circuits and synchronous switching, where low gate charge and fast rise/fall times reduce switching losses and enhance efficiency.

The device’s robust avalanche rating allows it to handle energy from inductive load transients safely. It is compatible with standard gate drivers and logic-level signals, ensuring easy integration into industrial control circuits. The MOSFET’s TO-220 package enables efficient heat dissipation when used with a heatsink, supporting continuous high-current operation.

## Applications

* DC-DC converters and voltage regulators
* Motor control for industrial and automotive applications
* Load switching in high-current power circuits
* Power management in server, telecom, and industrial systems
* Synchronous rectification in power supplies
* High-frequency PWM switching applications

## Package and Mechanical Information

* Package Type: TO-220, single-sided tab for heatsink mounting
* Pin Configuration: Gate, Drain, Source
* Mounting: Standard screw or clip for heatsink attachment
* Thermal Considerations: RthJC = 0.75 K/W typical; junction-to-ambient RthJA depends on heatsink and airflow
* Creepage and Clearance: Optimized for 100 V operation
* Mechanical Robustness: Suitable for automated insertion and soldering in through-hole PCB assembly

## Design Considerations

* Ensure adequate gate drive voltage for full enhancement and minimal R_DS(on)
* Optimize PCB layout to minimize parasitic inductance and voltage overshoot
* Implement heatsinking or forced-air cooling to maintain junction temperature within limits
* Use proper snubber or clamping circuits if switching highly inductive loads
* Monitor device temperature in high-power or continuous-duty applications
* Consider fast-switching impact on EMI and layout-sensitive parasitics

## Reliability and Compliance

* Operating Temperature Range: -55°C to +175°C junction temperature
* Storage Temperature: -55°C to +175°C
* Avalanche Robustness: Designed to survive single-pulse inductive events
* ESD and Latch-Up Resistance: Suitable for industrial environments
* Long-Term Reliability: High-temperature and high-current operation capable; suitable for automotive and industrial systems

## Summary

The Infineon IRF5810 is a 100 V, 29 A N-channel MOSFET optimized for low R_DS(on), fast switching, and robust avalanche handling. It is suitable for high-efficiency DC-DC converters, motor drives, load switches, and industrial power applications. Its TO-220 package enables efficient thermal management and reliable operation under high-current conditions. With fast switching, low gate charge, and high current capability, the IRF5810 supports demanding industrial, automotive, and power management systems.