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Home  /  Discrete Semiconductors  /  Transistors - FETs, MOSFETs - RF  /  Integra Technologies IGN1011L1200

IGN1011L1200

Active Icon Active - GAN, RF POWER TRANSISTOR, L-BAND
IGN1011L1200
IGN1011L1200
Integra Technologies
Manufacturer:
Mfr Part #
Datasheet:
Description:
GAN, RF POWER TRANSISTOR, L-BAND
 
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IGN1011L1200 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Tray
Product Status
Active
Transistor Type
HEMT
Frequency
1.03GHz ~ 1.09GHz
Gain
16.8dB
Voltage - Test
50 V
Current Rating (Amps)
-
Noise Figure
-
Current - Test
160 mA
Power - Output
1250W
Voltage - Rated
180 V
Mounting Type
-
Package / Case
PL84A1
Supplier Device Package
PL84A1

IGN1011L1200 Stock: 42970

History Price
$914.14000
Certificates
5.0 / 5.0
review stars
Author Icon
Léonie Caron
Location Icon France
5 stars
2021-08-02 07:24
Felt marking on the packaging not very readable (confusion possible ) ! Without that, conform! Thank you seller!
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Danuta Krawczyk
Location Icon Poland
5 stars
2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we
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Charles Reed
Location Icon United States
5 stars
2021-12-31 23:06
Good product and work correctly .
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Quentin Giraud
Location Icon France
5 stars
2021-07-09 02:45
Well received, not tested yet
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Jukka Laakso
Location Icon Finland
5 stars
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.

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