IRLZ44ZSPBF

Active - MOSFET N-CH 55V 51A TO263-3-2
Description:
MOSFET N-CH 55V 51A TO263-3-2
IRLZ44ZSPBF Specification
Product Attribute
Attribute Value
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25℃
51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
13.5mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1620 pF @ 25 V
Power Dissipation (Max)
80W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRLZ44ZSPBF Description
The International Rectifier IRLZ44ZSPBF is a high-performance N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in applications requiring efficient switching and power management. It is specifically designed for low-voltage, high-current applications, offering low on-resistance, high speed, and robust thermal characteristics. The IRLZ44ZSPBF is typically employed in circuits such as power supplies, motor control systems, and audio amplifiers, where fast switching and minimal power loss are essential.
### Key Features and Overview
* Type: The IRLZ44ZSPBF is an N-channel MOSFET, which means it uses an N-type semiconductor as the conducting channel between the source and the drain. N-channel MOSFETs are typically preferred for high-current applications because of their superior conductivity compared to P-channel MOSFETs.
* Low On-Resistance (Rds(on)): One of the most notable features of the IRLZ44ZSPBF is its low on-resistance, which is typically 22 mΩ at Vgs = 10 V. The low on-resistance results in minimal power loss during operation, which translates to greater efficiency and lower heat generation. This characteristic is particularly advantageous in power conversion systems where minimizing energy loss is critical.
* Gate Threshold Voltage (Vgs(th)): The gate threshold voltage of the IRLZ44ZSPBF is 1.0 V to 2.0 V, which is low enough to ensure that the MOSFET turns on with a relatively low gate voltage, enabling it to operate efficiently in circuits that require fast switching with low control voltage.
* High-Speed Switching: The IRLZ44ZSPBF is capable of fast switching speeds, making it ideal for applications such as DC-DC converters, motor control, and audio power amplifiers. The fast switching characteristics minimize switching losses, leading to higher system efficiency.
* Thermal Characteristics: The MOSFET is designed to operate efficiently even under higher thermal stress. With a maximum junction temperature of 150°C, the IRLZ44ZSPBF can be used in environments where thermal management is a challenge. The low on-resistance further enhances its thermal performance by minimizing power dissipation.
* Package Type: The IRLZ44ZSPBF comes in a TO-220AB package, a widely used package for power semiconductors. This package type offers excellent heat dissipation and is well-suited for applications that require the device to handle high power levels. It has three terminals (source, gate, and drain) that are designed for easy integration into through-hole PCB designs.
### Electrical and Performance Characteristics
* Drain-Source Voltage (Vds): The IRLZ44ZSPBF has a drain-source voltage rating of 55 V, meaning that the MOSFET can handle a maximum voltage difference between the drain and source terminals of up to 55 V without breaking down or sustaining damage. This voltage rating is suitable for low to medium-voltage power systems.
* Continuous Drain Current (Id): The MOSFET can handle a continuous drain current of 47 A at a case temperature of 25°C. This high current rating is suitable for applications where high power is required. It can carry even higher currents at lower temperatures, as indicated in the datasheet’s thermal characteristics.
* Total Gate Charge (Qg): The total gate charge is typically 67 nC (nanoCoulombs) at a Vds = 25 V. This relatively low gate charge means that the IRLZ44ZSPBF can be driven by low-power logic signals, making it ideal for high-speed switching applications where minimal drive power is required.
* Gate-Source Voltage (Vgs): The gate-source voltage rating is ±20 V, which ensures that the device can withstand reasonable voltage swings between the gate and source terminals without risk of damage, providing flexibility in the design of control circuitry.
* Power Dissipation (Pd): The IRLZ44ZSPBF has a maximum power dissipation of 94 W at a case temperature of 25°C. This indicates that the MOSFET can efficiently handle high power levels, provided that adequate heat sinking is used to manage thermal energy.
### Application Characteristics
* Power Supplies: The IRLZ44ZSPBF is widely used in power supply circuits, including DC-DC converters, buck converters, and boost converters, where low on-resistance and fast switching are crucial for efficiency. It is often used in both the high-side and low-side switching stages of a converter design to help regulate output voltage or current while maintaining minimal heat generation.
* Motor Control: The IRLZ44ZSPBF is used in motor control applications, especially in DC motor drives and BLDC (Brushless DC) motor controllers. Its high current capacity and low switching losses make it ideal for controlling the motor's speed and direction, allowing for efficient operation in a variety of industrial and consumer products, including power tools, electric vehicles, and robotics.
* Audio Power Amplifiers: In audio amplifier circuits, the IRLZ44ZSPBF is used for output stage power switching, where its low on-resistance reduces the distortion and losses in the audio path, leading to clearer, more efficient amplification. It’s particularly useful in class D audio amplifiers, which rely on efficient switching to minimize power loss.
* Automotive Applications: The IRLZ44ZSPBF is well-suited for automotive power management, such as in battery management systems and power distribution modules. The device's ability to handle high currents and its relatively low on-resistance make it ideal for automotive applications where reliability and energy efficiency are critical.
* LED Drivers: The IRLZ44ZSPBF is often found in LED drivers used in lighting systems. Its efficient switching and low power dissipation ensure that the LED circuit operates at optimal efficiency without excessive heat buildup, which is crucial for the longevity and performance of the LEDs.
* Solar Inverters: The device is commonly used in solar inverters where power conversion and maximum energy transfer efficiency are essential. The low on-resistance and high current capacity of the IRLZ44ZSPBF allow it to efficiently manage the power coming from solar panels and deliver it to the grid or batteries.
### Reliability and Protection Features
* Overvoltage Protection: Although the IRLZ44ZSPBF does not have built-in overvoltage protection, it is rated for a maximum drain-source voltage of 55 V, providing a certain level of inherent protection against transient voltage spikes. External circuits, such as zener diodes or transient voltage suppressors, can be used to protect the MOSFET from overvoltage events.
* Thermal Management: The IRLZ44ZSPBF’s low on-resistance and high thermal dissipation capability make it highly effective in managing heat. However, for maximum performance in high-power applications, it is recommended to use the MOSFET in conjunction with a heatsink or other cooling methods to ensure that the junction temperature remains within safe operating limits.
* Short Circuit Protection: The IRLZ44ZSPBF does not include built-in short-circuit protection, but its robust design and high current-handling capabilities allow it to tolerate short circuits for brief periods. Protection circuitry can be added externally to further protect the MOSFET and the system from potential damage due to short circuits.
* ESD Protection: The IRLZ44ZSPBF has an internal body diode that can provide some level of protection against electrostatic discharge (ESD). However, external ESD protection devices like resistors and diodes can be used to further safeguard the MOSFET in sensitive applications.
### Summary
The International Rectifier IRLZ44ZSPBF is a versatile and efficient N-channel power MOSFET with a low on-resistance of 22 mΩ and a high current rating of 47 A. Its high-speed switching, low gate charge, and robust thermal characteristics make it suitable for a wide range of applications, including DC-DC converters, motor control, audio amplifiers, and automotive power management systems. With a maximum drain-source voltage of 55 V, the MOSFET is ideal for medium-voltage power systems, providing high efficiency and minimal power dissipation. Its TO-220AB package ensures efficient heat dissipation, while the device's reliable performance and robust protection features make it an excellent choice for power-sensitive applications requiring fast switching and efficient power conversion.