IXTA1N170DHV
Active - MOSFET N-CH 1700V 1A TO263
Description:
MOSFET N-CH 1700V 1A TO263
IXTA1N170DHV Specification
Product Attribute
Attribute Value
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25℃
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16Ohm @ 500mA, 0V
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
3090 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
290W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263HV
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXTA1N170DHV Stock: 36365
5.0 / 5.0
2023-06-28 07:12
Arrived very fast, congratulations to the seller is Alli, I have not tested yet.
2023-06-27 05:08
Perfect! Very fast delivery and good product!
2023-06-28 23:46
All 10 fast ok
2023-06-28 10:36
All ok, thanks for quick delivery
2023-06-26 12:00
Very good excellent
United States
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