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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  Microchip Technology 2N2992

2N2992

Active Icon Active - POWER BJT
2N2992
2N2992
Microchip Technology
Manufacturer:
Mfr Part #
Datasheet:
Description:
POWER BJT
 
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2N2992 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
5 W
Frequency - Transition
-
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Supplier Device Package
TO-5AA

2N2992 Description

Overview
The Microchip Technology 2N2992 is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is commonly utilized in medium power analog circuits, driver stages, and switching circuits requiring reliable and consistent transistor performance. The 2N2992 offers a balanced combination of gain, voltage handling, and current capacity, making it suitable for a wide range of electronic designs including audio amplifiers, relay drivers, and control circuits.

Device Structure and Technology

* Constructed using planar epitaxial technology for improved gain and frequency response
* NPN transistor with a standard transistor configuration (Emitter, Base, Collector)
* Designed to handle moderate power levels with robust electrical and thermal characteristics
* Compatible with standard transistor mounting and PCB layouts due to its TO-39 metal can package

Electrical Specifications

* Collector-Emitter Voltage (V\_CEO): Maximum 80 V, allowing operation in circuits with moderately high voltage requirements
* Collector-Base Voltage (V\_CBO): Maximum 100 V, ensuring safe operation under reverse bias conditions
* Emitter-Base Voltage (V\_EBO): Maximum 5 V, typical for small-signal transistor base-emitter junctions
* Collector Current (I\_C): Continuous collector current up to 3 A, suitable for medium power amplification and switching
* Power Dissipation (P\_D): Maximum power dissipation up to 30 W (with proper heat sinking), enabling operation in moderately demanding power applications
* Current Gain (h\_FE): DC gain typically ranging from 40 to 160 depending on collector current and temperature, supporting a wide range of linear amplification needs
* Transition Frequency (f\_T): Typically around 50 MHz, suitable for low to medium frequency applications

Thermal and Mechanical Characteristics

* Operating Junction Temperature (T\_j): -65°C to +200°C, allowing for high-temperature operation in industrial and automotive environments
* Package Type: TO-39 metal can package, providing excellent thermal conductivity and mechanical protection
* The metal can aids heat dissipation and shields the transistor from external mechanical stresses and electromagnetic interference

Performance Characteristics

* Reliable transistor for linear amplification and switching duties with stable gain and low distortion
* Robust voltage and current ratings allow usage in various analog and digital circuits
* Suitable for use in amplifier output stages, relay drivers, and signal processing applications
* The TO-39 package enables effective heat dissipation for sustained operation at elevated power levels

Applications

* Audio amplifier output stages requiring medium power transistors with stable gain
* Switching circuits such as relay drivers, solenoid controllers, and motor drivers
* Industrial control systems and instrumentation where moderate voltage and current handling is needed
* Signal amplification in consumer electronics and communication devices
* Test and measurement equipment requiring reliable medium power transistor performance

Reliability and Compliance

* Built to withstand typical electrical and thermal stresses encountered in industrial and consumer electronics
* Metal can package enhances robustness and longevity under varying environmental conditions
* Tested for compliance with industry standards to ensure consistent performance

Development and Support

* Supported by detailed technical documentation including characteristic curves, electrical parameters, and application notes
* Compatible with standard transistor biasing and mounting techniques, simplifying design integration
* Available with reference designs and circuit examples for amplifier and switching applications

Conclusion
The Microchip Technology 2N2992 NPN bipolar junction transistor is a versatile and robust device suitable for a broad range of medium power analog and switching applications. Its high voltage and current capabilities, combined with a stable gain profile and durable TO-39 metal package, make it a reliable choice for designers seeking dependable transistor performance in audio amplification, industrial control, and general-purpose switching circuits. The 2N2992’s balance of electrical and thermal characteristics supports efficient and long-lasting operation across diverse environments and applications.

2N2992 Stock: 7020

History Price
$26.59500
Certificates
5.0 / 5.0
review stars
Author Icon
Margot Leroy
Location Icon France
5 stars
2023-04-05 07:51
Top as the description
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Emily Becker
Location Icon Germany
5 stars
2023-04-06 01:07
I needed the MOSFETs for a RGBW board. After a year everything is still OK
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Ivy Robinson
Location Icon United States
5 stars
2023-04-05 14:52
Excellent product, price and shipping. Excellent seller !!! Thank you.
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Jairo Silva Sr.
Location Icon Brazil
5 stars
2023-04-06 07:46
Very good price, fast Post seller, you can buy quiet.
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Isabela Fernanda
Location Icon Brazil
5 stars
2023-04-03 14:16
Received, everything OK.

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