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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  Microchip Technology 2N5317

2N5317

Active Icon Active - POWER BJT
2N5317
2N5317
Microchip Technology
Manufacturer:
Mfr Part #
Datasheet:
Description:
POWER BJT
 
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2N5317 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
87 W
Frequency - Transition
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Stud Mount
Package / Case
TO-211MA, TO-210AC, TO-61-4, Stud
Supplier Device Package
TO-61

2N5317 Stock: 38980

History Price
$499.12500
Certificates
5.0 / 5.0
review stars
Author Icon
Daniela Romano
Location Icon Italy
5 stars
2023-04-04 12:09
Everything ok recommended
Author Icon
Marloes de Lange
Location Icon Netherlands
5 stars
2023-04-01 03:19
Sent quickly. Tested and are OK.
Author Icon
Carlo Gallo
Location Icon Italy
5 stars
2023-04-04 04:42
Perfect. Arrived in Italy in a very short time. Very good seller.
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Yara van der Heijden
Location Icon Netherlands
5 stars
2022-10-29 11:42
all work, bought already for a couple of times
Author Icon
Sarah von Stuhl
Location Icon Germany
5 stars
2023-03-31 23:39
Items arrived in time and are working fine.

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