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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  Microchip Technology 2N5552

2N5552

Active Icon Active - POWER BJT
2N5552
2N5552
Microchip Technology
Manufacturer:
Mfr Part #
Datasheet:
Description:
POWER BJT
 
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2N5552 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 500μA, 5mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
15 W
Frequency - Transition
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Supplier Device Package
TO-5AA

2N5552 Stock: 12945

History Price
$61.35000
Certificates
5.0 / 5.0
review stars
Author Icon
Sofia Vitória
Location Icon Brazil
5 stars
2023-03-18 04:17
Material tested and confirmed with voltage limit, test above manufacturer's rated
Author Icon
George Mitchell
Location Icon United States
5 stars
2023-03-17 13:18
All very excellent work well
Author Icon
Nienke de Haan
Location Icon Netherlands
5 stars
2023-03-17 03:02
Delivered to Holland in 9 days!!! Great service
Author Icon
Anna Schmidt
Location Icon Germany
5 stars
2023-03-17 08:43
everything excellent, very fast shipping
Author Icon
Ivo Pereira
Location Icon Brazil
5 stars
2023-03-17 13:40
Arrived fast well packed recommend seller, all components and product from this seller is 100%, Anti Static packing, recommend.

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