Categories
New Arrivals
Quality Control
Reviews
Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  Microchip Technology 2N5598

2N5598

Active Icon Active - POWER BJT
2N5598
2N5598
Microchip Technology
Manufacturer:
Mfr Part #
Datasheet:
Description:
POWER BJT
 
3D Model Icon

2N5598 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
850mV @ 200μA, 1mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
20 W
Frequency - Transition
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Supplier Device Package
TO-66 (TO-213AA)

2N5598 Description

The Microchip Technology 2N5598 is a high-voltage, NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It is part of the 2N series of discrete transistors and is optimized for applications requiring medium to high voltage and moderate current handling. The 2N5598 exhibits robust performance in linear amplification, pulse, and switching circuits, making it suitable for audio amplifiers, power regulators, and industrial control circuits. Its TO-39 metal can package provides excellent thermal dissipation and mechanical reliability, supporting high-voltage operation in harsh environments.

## Electrical Characteristics

The 2N5598 is specified to handle substantial voltages while providing reliable current amplification. Key electrical parameters include:

* Collector-Emitter Voltage (V_CEO): 300 V maximum, suitable for high-voltage applications such as switch-mode power supplies and high-voltage amplifiers.
* Collector-Base Voltage (V_CBO): 400 V maximum, providing safe operation across the transistor junction in blocking conditions.
* Emitter-Base Voltage (V_EBO): 5 V maximum, typical for standard NPN transistor gate control.
* Collector Current (I_C): 1.5 A continuous maximum, enabling moderate current handling in amplifier and switching circuits.
* Peak Collector Current (I_CM): 3 A for short-duration pulses, supporting transient load conditions.
* Power Dissipation (P_C): 40 W maximum with adequate heatsinking, allowing high-power amplification under proper thermal management.
* DC Current Gain (h_FE): 40 to 160 at V_CE = 10 V and I_C = 50 mA, indicating typical amplification capability for linear and switching applications.
* Saturation Voltage (V_CE(sat)): 2 V typical at I_C = 1 A, minimizing conduction losses in switching operations.

These parameters define the transistor's suitability for both analog and switching circuits requiring high voltage and moderate current.

## Frequency and Switching Characteristics

The 2N5598 exhibits performance suitable for low to medium frequency applications:

* Transition Frequency (f_T): 4 MHz typical at V_CE = 20 V and I_C = 50 mA, supporting medium-speed amplification.
* Storage Time (t_s): 5 µs typical, contributing to moderate switching speed for pulse applications.
* Rise and Fall Times (t_r / t_f): 1 µs typical, suitable for analog signal amplification and low-frequency switching circuits.

Although not optimized for high-frequency RF applications, the 2N5598 provides reliable performance for audio, power, and industrial control systems requiring voltage amplification and switching at kHz to low MHz ranges.

## Thermal Characteristics

The TO-39 metal can package provides effective thermal dissipation, enhancing reliability under continuous operation:

* Maximum Junction Temperature (T_J): 200°C, supporting operation in industrial and high-power environments.
* Thermal Resistance, Junction-to-Case (R_thJC): 1.5°C/W typical, ensuring effective heat transfer to external heatsinks.
* Thermal Resistance, Junction-to-Ambient (R_thJA): 50°C/W on a standard PCB without heatsinking, highlighting the necessity of adequate thermal design.

Proper heatsinking and PCB layout are critical to maintaining junction temperature within safe limits, particularly under high collector current conditions.

## Robustness and Reliability

The 2N5598 is designed to handle electrical stresses in power and industrial circuits:

* Collector-Emitter Breakdown Voltage: High-voltage rating allows operation in circuits with large voltage swings.
* Short-Term Overcurrent Capability: Peak current handling enables transient tolerance without device degradation.
* Safe Operating Area (SOA): Specified for continuous and pulsed operation within voltage and current limits, ensuring device reliability in amplifier and switch-mode applications.
* Mechanical Durability: TO-39 package provides vibration and shock resistance suitable for industrial applications.

These characteristics ensure dependable operation in harsh electrical and mechanical environments.

## Package and Mechanical Data

The 2N5598 is housed in a TO-39 metal can package with the following attributes:

* Pin Configuration: Three leads – collector, base, and emitter – with standard pinout for ease of integration into circuits.
* Lead Material: Gold or nickel-plated leads compatible with soldering processes.
* Mounting: Through-hole design suitable for PCB and heatsink attachment.
* Thermal Coupling: Metal can allows direct thermal contact with PCB or external heatsinks for efficient heat dissipation.
* Mechanical Reliability: Robust package withstands vibration, shock, and thermal cycling in industrial and automotive environments.

This package allows high-power operation while maintaining mechanical and thermal reliability.

## Applications

The 2N5598 is suitable for applications requiring high-voltage switching and linear amplification:

* Audio Amplifiers: Medium-power output stages requiring high-voltage swing.
* Power Supplies: Switch-mode and linear voltage regulators.
* Industrial Control Circuits: Relays, solenoids, and motor drivers requiring moderate current handling.
* Pulse Amplification: Medium-speed pulse and signal amplification circuits.
* General-Purpose Switching: High-voltage switching applications in industrial and automotive electronics.

Its voltage tolerance, moderate current capacity, and robust packaging make it versatile for both analog and power switching designs.

## Conclusion

The Microchip Technology 2N5598 is a high-voltage, NPN bipolar junction transistor suitable for analog amplification and switching applications. Its 300 V collector-emitter rating, 1.5 A continuous collector current, and DC current gain of 40–160 provide reliable performance in linear and pulse circuits. The TO-39 metal package ensures efficient thermal dissipation and mechanical robustness. With moderate transition frequency and storage time, the 2N5598 is suitable for audio, industrial, and power control applications requiring voltage amplification and switching at low to medium frequencies. Proper thermal management and adherence to the safe operating area guarantee long-term reliability and consistent performance.

2N5598 Stock: 20680

History Price
$41.38500
Certificates
5.0 / 5.0
review stars
Author Icon
Felix Hopp
Location Icon Germany
5 stars
2023-04-05 07:40
The device which arrived is MXL7704-R3 and fixed my Raspberry Pi 3 B+ properly.
Author Icon
Jeroen de Boer
Location Icon Netherlands
5 stars
2023-04-04 05:08
Neat delivery good service recommended
Author Icon
Edward Roberts
Location Icon United States
5 stars
2023-04-06 10:46
Very good seller very fast product well packed thank you also
Author Icon
Margot Leroy
Location Icon France
5 stars
2023-04-05 07:51
Top as the description
Author Icon
Emily Becker
Location Icon Germany
5 stars
2023-04-06 01:07
I needed the MOSFETs for a RGBW board. After a year everything is still OK

2N5598 Related Parts

2N5038
2N5038
2N5038
2N5038
2N5882
2N5039
2N5868
2N5039
2N5039
2N5883
2N5882
2N5872
Request for Quotation
Part Number *
Manufacturer
Contact Person *
Email Address *
Inquiry Quantity *
Delivery Country *