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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  Microchip Technology 2N5601

2N5601

Active Icon Active - POWER BJT
2N5601
2N5601
Microchip Technology
Manufacturer:
Mfr Part #
Datasheet:
Description:
POWER BJT
 
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2N5601 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
850mV @ 200μA, 1mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
20 W
Frequency - Transition
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-213AA, TO-66-2
Supplier Device Package
TO-66 (TO-213AA)

2N5601 Stock: 22200

History Price
$41.38500
Certificates
5.0 / 5.0
review stars
Author Icon
Ylenia Ruggiero
Location Icon Italy
5 stars
2023-03-28 14:59
Great product and great seller
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Ewelina Wróbel
Location Icon Poland
5 stars
2023-03-26 07:37
Good quality goods in accordance with the order. Time of delivery 18 days.
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Thiago Rafael
Location Icon Brazil
5 stars
2023-03-27 13:55
Very good product
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Melissa Perez
Location Icon United States
5 stars
2023-03-27 06:30
Came as requested. Quality product. Arrived fast and with good protection. I recommend and will buy again in the future.
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Vanessa Conti
Location Icon Italy
5 stars
2023-03-26 11:37
Serious and professional seller recommend it

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