2N5839

Overview
The Microchip Technology 2N5839 is a high-voltage NPN bipolar junction transistor (BJT) designed for medium- to high-power amplification and switching applications. It is commonly used in power supply circuits, audio amplifiers, relay driving, and other general-purpose switching tasks. The 2N5839 combines robust voltage handling with reliable current gain, making it suitable for industrial, automotive, and consumer electronics applications that require durability and consistent performance under varying load conditions.

Device Structure and Type
The 2N5839 is an NPN transistor, where current flows from the collector to the emitter when a forward bias is applied to the base. Its construction supports high voltage operation and moderate current handling, making it suitable for power switching and signal amplification in low- to medium-frequency circuits. The transistor is available in a TO-220 package, which provides excellent thermal dissipation, mechanical stability, and ease of PCB mounting.

Electrical Characteristics
Key electrical parameters of the 2N5839 include:

* Collector-Emitter Voltage (Vceo): 400 V, enabling operation under high-voltage conditions.
* Collector-Base Voltage (Vcbo): 400 V, allowing flexible circuit biasing.
* Emitter-Base Voltage (Vebo): 5 V, suitable for typical input signal levels.
* Collector Current (Ic max): 8 A continuous, which allows the device to handle medium-power switching applications.
* Power Dissipation (Ptot): 80 W, supporting substantial power handling with proper heatsinking in the TO-220 package.

Gain Characteristics
The 2N5839 offers a DC current gain (hFE) ranging from 40 to 160 at a collector current of 2 A and Vce of 100 V. This provides reliable amplification across a wide range of operating conditions, supporting linear signal amplification in audio circuits and switching control in power devices. The transistor’s gain is stable over temperature and load variations, ensuring consistent performance.

Frequency Response
This device has a transition frequency (fT) of approximately 4 MHz, allowing effective operation in low- to medium-frequency analog and switching applications. While it is not optimized for high-speed RF circuits, it performs reliably in general-purpose power amplification and control circuits.

Thermal Characteristics
The TO-220 package and the transistor’s thermal design allow it to operate at junction temperatures up to 150 °C. With a thermal resistance of approximately 1.5 °C/W to the case, and proper heatsinking, the device can safely dissipate substantial power in high-voltage switching and amplifier applications.

Applications
The 2N5839 is widely used in:

* Linear and switching power supplies
* Audio amplification circuits
* Relay and solenoid drivers
* Motor control circuits
* High-voltage switching in industrial and consumer electronics

Reliability and Environmental Operation
The transistor operates reliably over an ambient temperature range of -65 °C to 150 °C, making it suitable for demanding industrial and automotive environments. Its robust construction ensures stable operation under voltage spikes, temperature variations, and varying load conditions.

Package and Physical Characteristics
The TO-220 package provides a compact yet mechanically robust footprint suitable for through-hole mounting. The package allows efficient heat transfer to a heatsink, enabling the device to operate at higher power levels without exceeding thermal limits. Lead spacing and package dimensions are standardized for easy integration into circuit boards.

Key Specifications

* Type: NPN Bipolar Junction Transistor (BJT)
* Collector-Emitter Voltage (Vceo): 400 V
* Collector-Base Voltage (Vcbo): 400 V
* Emitter-Base Voltage (Vebo): 5 V
* Collector Current (Ic max): 8 A
* Power Dissipation (Ptot): 80 W
* DC Current Gain (hFE): 40–160 @ Ic=2 A, Vce=100 V
* Transition Frequency (fT): 4 MHz
* Junction Temperature (Tj max): 150 °C
* Package: TO-220
* Operating Temperature Range: -65 °C to 150 °C

Summary
The Microchip Technology 2N5839 is a robust, high-voltage NPN transistor designed for medium- to high-power amplification and switching applications. Its combination of high voltage tolerance, reliable current gain, and thermal stability makes it ideal for audio circuits, motor drivers, power supplies, and industrial control applications. The TO-220 package ensures effective heat dissipation and mechanical reliability, allowing the 2N5839 to operate efficiently in demanding electrical environments.