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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  Microchip Technology 2N6251

2N6251

Active Icon Active - NPN TRANSISTOR
2N6251
2N6251
Microchip Technology
Manufacturer:
Mfr Part #
Datasheet:
Description:
NPN TRANSISTOR
 
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2N6251 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
350 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.67A, 10A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 10A, 3V
Power - Max
6 W
Frequency - Transition
-
Operating Temperature
-65 ℃ ~ 200 ℃
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Supplier Device Package
TO-204AA (TO-3)

2N6251 Description

Overview
The Microchip Technology 2N6251 is a high-voltage NPN power transistor designed for medium- to high-power switching and amplification applications. It is widely used in industrial control, power supply circuits, relay driving, audio amplification, and motor control systems. The device offers robust performance, high current handling, and reliable operation under demanding environmental and electrical conditions.

Device Type and Structure
The 2N6251 is an NPN bipolar junction transistor (BJT). It is designed with a rugged silicon structure to withstand high collector-emitter voltages and large collector currents. The transistor is typically packaged in a TO-220 case, allowing efficient heat dissipation and easy integration into circuits requiring power handling and thermal management. Its design ensures stable operation under load and temperature variations, making it suitable for both switching and linear amplifier applications.

Electrical Characteristics
Key electrical specifications of the 2N6251 include:

* Collector-Emitter Voltage (Vceo): 100 V, supporting high-voltage switching applications.
* Collector-Base Voltage (Vcbo): 100 V, providing margin for circuit design flexibility.
* Emitter-Base Voltage (Vebo): 5 V, compatible with standard low-voltage control signals.
* Collector Current (Ic max): 10 A continuous, capable of handling substantial loads.
* Power Dissipation (Ptot): 115 W with proper heatsinking, enabling high-current operation.
* DC Current Gain (hFE): Typically ranges from 1000 to 2000, due to its Darlington-like internal configuration, providing very high amplification for low base drive signals.

Switching and Amplification Performance
The 2N6251 exhibits strong switching capabilities, making it suitable for relay drivers, solenoids, and power electronic switches. The high current gain ensures that even a small base current can control large collector currents, reducing the need for large driving circuitry. It is also used in linear amplification circuits, where it can drive medium- to high-power loads while maintaining signal fidelity.

Thermal Characteristics
The TO-220 package allows efficient heat dissipation, with a maximum junction temperature (Tj) of 150 °C. Thermal resistance from junction to case is minimized, and the device can be mounted to a heatsink to further enhance thermal management. Proper design considerations prevent thermal runaway and ensure reliable operation under continuous high-current conditions.

Applications
The 2N6251 is suitable for a wide range of applications, including:

* Motor control circuits and drives
* High-current relay and solenoid drivers
* Linear and switching power supplies
* Audio power amplifiers
* Industrial automation and control systems
* High-voltage switching applications

Reliability and Environmental Tolerance
The 2N6251 operates reliably across a wide ambient temperature range of -65 °C to 150 °C, making it suitable for automotive, industrial, and harsh-environment applications. It is designed for robust operation under high-voltage, high-current, and high-temperature conditions, providing stability and protection against overcurrent and voltage stress.

Package and Physical Characteristics
The transistor comes in a TO-220 package, which provides mechanical stability, easy mounting on PCBs, and compatibility with heat sinks. The three leads—collector, base, and emitter—allow straightforward connection to circuits, ensuring minimal voltage drop and efficient current conduction.

Key Specifications

* Type: NPN Power Transistor
* Collector-Emitter Voltage (Vceo): 100 V
* Collector-Base Voltage (Vcbo): 100 V
* Emitter-Base Voltage (Vebo): 5 V
* Collector Current (Ic max): 10 A
* Power Dissipation (Ptot): 115 W
* DC Current Gain (hFE): 1000–2000 typical
* Transition Frequency (fT): 1 MHz
* Maximum Junction Temperature (Tj): 150 °C
* Operating Temperature Range: -65 °C to 150 °C
* Package: TO-220

Summary
The Microchip Technology 2N6251 is a versatile and reliable NPN power transistor suitable for medium- to high-power switching and amplification tasks. Its high voltage tolerance, large current handling, and high current gain make it ideal for motor drivers, power supplies, relay circuits, and audio amplifiers. The TO-220 package ensures efficient thermal management, while the device’s robust design allows stable performance in industrial, automotive, and high-power applications. Its combination of high gain, thermal reliability, and voltage tolerance provides engineers with a dependable solution for demanding embedded and power electronics systems.

2N6251 Stock: 43420

History Price
$139.87500
Certificates
5.0 / 5.0
review stars
Author Icon
Margot Leroy
Location Icon France
5 stars
2023-04-05 07:51
Top as the description
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Emily Becker
Location Icon Germany
5 stars
2023-04-06 01:07
I needed the MOSFETs for a RGBW board. After a year everything is still OK
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Ivy Robinson
Location Icon United States
5 stars
2023-04-05 14:52
Excellent product, price and shipping. Excellent seller !!! Thank you.
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Jairo Silva Sr.
Location Icon Brazil
5 stars
2023-04-06 07:46
Very good price, fast Post seller, you can buy quiet.
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Isabela Fernanda
Location Icon Brazil
5 stars
2023-04-03 14:16
Received, everything OK.

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