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2N6579

Active - POWER BJT

2N6579

Microchip Technology

Manufacturer:

Microchip Technology

Mfr Part #

Category:

Transistors - Bipolar (BJT) - Single

Datasheet:

Description:

POWER BJT

2N6579 Specification

Product Attribute

Attribute Value

Category

Transistors - Bipolar (BJT) - Single

Manufacturer

Microchip Technology

Series

-

Packaging

Bulk

Product Status

Active

Transistor Type

NPN

Current - Collector (Ic) (Max)

12 A

Voltage - Collector Emitter Breakdown (Max)

350 V

Vce Saturation (Max) @ Ib, Ic

1.5V @ 500μA, 3mA

Current - Collector Cutoff (Max)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

-

Power - Max

125 W

Frequency - Transition

-

Operating Temperature

-65 ℃ ~ 200 ℃ (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AA, TO-3

Supplier Device Package

TO-204AD (TO-3)

2N6579 Stock: 33100

History Price

$167.89500

Certificates

5.0 / 5.0

Thiago Rafael

Brazil

2023-03-27 13:55

Very good product

Melissa Perez

United States

2023-03-27 06:30

Came as requested. Quality product. Arrived fast and with good protection. I recommend and will buy again in the future.

Vanessa Conti

Italy

2023-03-26 11:37

Serious and professional seller recommend it

Ugo Marino

Italy

2023-03-25 05:08

All good recommended

Leandro

Brazil

2023-03-27 13:27

Arrived very fast everything in order I recommend

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