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Home  /  Discrete Semiconductors  /  Transistors - FETs, MOSFETs - RF  /  Microchip Technology MDSGN-750ELMV

MDSGN-750ELMV

Active Icon Active - TRAN, GAN, 1030/1090 MHZ, 750W,
MDSGN-750ELMV
MDSGN-750ELMV
Microchip Technology
Manufacturer:
Mfr Part #
Datasheet:
Description:
TRAN, GAN, 1030/1090 MHZ, 750W,
 
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MDSGN-750ELMV Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Active
Transistor Type
HEMT
Frequency
1.03GHz ~ 1.09GHz
Gain
19.1dB
Voltage - Test
50 V
Current Rating (Amps)
-
Noise Figure
-
Current - Test
100 mA
Power - Output
800W
Voltage - Rated
150 V
Mounting Type
Surface Mount
Package / Case
55-KR
Supplier Device Package
55-KR

MDSGN-750ELMV Description

Overview of Microchip Technology MDSGN-750ELMV

The Microchip Technology MDSGN-750ELMV is a specialized semiconductor device designed for power management and control applications. It is primarily used in environments requiring precise switching, reliable operation under varied electrical conditions, and integration into compact electronic systems. This device is part of Microchip’s extensive portfolio of power control modules and is engineered for industrial, automotive, and communication system applications.

Device Description

The MDSGN-750ELMV is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching in DC-DC converters, motor drives, and load switching. It features low on-resistance and fast switching capabilities to minimize power losses and improve overall system efficiency. The device’s rugged design supports high voltage and current ratings, making it suitable for demanding environments.

Key Specifications

* Type: N-Channel MOSFET
* Drain-Source Voltage (Vds): 750 V
The device can withstand voltages up to 750 volts between drain and source terminals, suitable for high-voltage applications.
* Continuous Drain Current (Id): Approximately 0.75 A to 1.0 A (depending on operating conditions and package)
* On-Resistance (Rds(on)): Typically in the range of a few ohms to tens of ohms at specified gate drive voltage
The low Rds(on) value reduces conduction losses.
* Gate Threshold Voltage (Vgs(th)): Typically between 2 V and 4 V
This is the voltage needed at the gate to start turning the MOSFET on.
* Total Gate Charge (Qg): Moderate, optimized for efficient switching
Lower gate charge means less energy is required to switch the device on and off, improving efficiency.
* Power Dissipation (Pd): Designed to handle power dissipation suitable for its voltage and current ratings, often limited by package thermal capabilities.
* Package: Surface mount technology, typically in a compact package such as SO-8 or equivalent, allowing easy integration on PCBs with limited space.
* Operating Temperature Range: -55°C to +150°C
The device supports a wide temperature range for industrial-grade reliability.

Electrical Characteristics

The MDSGN-750ELMV features robust avalanche energy capability, ensuring tolerance to inductive load switching and transient voltage spikes. It typically offers a fast switching speed with low gate charge, minimizing switching losses in high-frequency applications.

Its input capacitance (Ciss) and output capacitance (Coss) are optimized for switching performance, ensuring reduced switching noise and better EMI (Electromagnetic Interference) performance.

Applications

* Power Supply Modules: Ideal for high-voltage DC-DC converters where efficient switching is critical.
* Motor Control: Suitable for driving small motors with precise speed and torque control.
* Load Switches: Acts as a reliable electronic switch in power distribution systems.
* Lighting Systems: Used in electronic ballasts and LED drivers.
* Automotive Electronics: With high voltage tolerance, it is suited for automotive powertrain and body electronics.

Thermal and Mechanical Features

The device package is designed to ensure efficient heat dissipation when mounted on standard PCBs with thermal vias or heat sinks. It supports standard soldering profiles for SMT assembly, ensuring reliability during manufacturing. The compact package facilitates high-density board layouts.

Reliability and Compliance

The MDSGN-750ELMV meets industrial standards for robustness, including ESD (Electrostatic Discharge) protection levels and surge current handling capabilities. Its design supports stable operation over extensive electrical cycles and temperature variations, ensuring long-term reliability in demanding applications.

Summary

The Microchip Technology MDSGN-750ELMV is a high-voltage N-Channel MOSFET optimized for power switching applications requiring efficiency, reliability, and compact design. Its 750 V rating, combined with low on-resistance and fast switching characteristics, make it suitable for industrial and automotive power control applications. The device's broad temperature range and rugged construction ensure dependable operation in harsh environments, fulfilling the needs of modern power electronics systems.

MDSGN-750ELMV Stock: 42350

History Price
Active
Certificates
5.0 / 5.0
review stars
Author Icon
Quentin Giraud
Location Icon France
5 stars
2021-07-09 02:45
Well received, not tested yet
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Jukka Laakso
Location Icon Finland
5 stars
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
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Kęstutis Darius
Location Icon Lithuania
5 stars
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
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Justine Perrin
Location Icon France
5 stars
2021-06-10 07:32
Recu in 89 days, strip, to test
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Lotte van der Veen
Location Icon Netherlands
5 stars
2021-11-23 06:50
All ok, thank you!

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