MT29F2G08ABAGAH4-ITE:G TR

The Micron Technology MT29F2G08ABAGAH4-ITE:G TR is a NAND flash memory device designed for a variety of applications, including mobile devices, consumer electronics, and embedded systems. This device is part of Micron's extensive portfolio of NAND flash products, known for their reliability, performance, and efficiency. Below is a detailed overview of its specifications, features, and potential applications.

### Overview

The MT29F2G08ABAGAH4-ITE:G TR is a 2Gb (gigabit) NAND flash memory chip that utilizes a 2-bit per cell (MLC) architecture. This device is designed to provide high-density storage solutions while maintaining low power consumption and fast data access speeds. It is particularly suitable for applications that require a balance between performance and cost-effectiveness.

### Key Specifications

1. Memory Density:
- Capacity: 2Gb (256MB) of NAND flash memory, providing ample storage for various applications.

2. Architecture:
- NAND Type: Multi-Level Cell (MLC) technology, allowing for two bits of data to be stored per cell, which increases storage density.
- Page Size: 4KB page size, which is standard for many NAND flash applications, facilitating efficient data management.

3. Interface:
- Interface Type: ONFI (Open NAND Flash Interface) compliant, ensuring compatibility with a wide range of host controllers and systems.
- Data Bus Width: 8 bits, allowing for efficient data transfer rates.

4. Performance:
- Read Speed: Up to 25 MB/s for sequential read operations, providing fast access to stored data.
- Write Speed: Up to 10 MB/s for sequential write operations, suitable for applications requiring moderate write speeds.
- Random Read/Write Performance: Optimized for random access, making it suitable for applications with frequent read/write operations.

5. Power Consumption:
- Active Power: Low active power consumption, typically around 50 mA during read operations.
- Standby Power: Very low standby power consumption, making it ideal for battery-operated devices.

6. Endurance and Reliability:
- Program/Erase Cycles: Typically rated for 3,000 to 10,000 program/erase cycles, depending on usage conditions, ensuring durability for various applications.
- Data Retention: Data retention period of up to 10 years at 25°C, providing reliable long-term storage.

7. Package and Dimensions:
- Package Type: Available in a 48-ball BGA (Ball Grid Array) package, which is compact and suitable for high-density applications.
- Dimensions: The small footprint of the package allows for easy integration into space-constrained designs.

### Features

- Advanced Error Correction: The MT29F2G08ABAGAH4-ITE:G TR supports advanced error correction algorithms, enhancing data integrity and reliability.
- Wear Leveling: Integrated wear leveling algorithms help distribute write and erase cycles evenly across the memory cells, extending the lifespan of the device.
- Low Voltage Operation: Designed to operate at low voltage levels (typically 2.7V to 3.6V), making it suitable for energy-efficient applications.
- Temperature Range: Operating temperature range from -40°C to +85°C, ensuring reliable performance in harsh environments.

### Applications

The Micron MT29F2G08ABAGAH4-ITE:G TR NAND flash memory device is suitable for a wide range of applications, including:

- Mobile Devices: Used in smartphones, tablets, and other portable devices requiring efficient storage solutions.
- Consumer Electronics: Ideal for digital cameras, MP3 players, and other consumer electronics that require reliable and fast storage.
- Embedded Systems: Suitable for industrial automation, automotive applications, and IoT devices that require robust and efficient memory solutions.
- Data Logging: Can be utilized in data logging applications where reliable storage of sensor data is essential.

### Conclusion

The Micron Technology MT29F2G08ABAGAH4-ITE:G TR NAND flash memory device is a versatile and reliable solution for various storage needs. With its high density, efficient performance, and advanced features, it is well-suited for a wide range of applications in mobile, consumer, and embedded systems. Its low power consumption and robust reliability make it an excellent choice for developers looking to implement NAND flash memory in their designs, ensuring that it meets the demands of modern electronic devices.