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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  Nexperia PBSS8110X,135

PBSS8110X,135

Active Icon Active - TRANS NPN 100V 1A SOT89
PBSS8110X,135
PBSS8110X,135
Nexperia
Manufacturer:
Mfr Part #
Datasheet:
Description:
TRANS NPN 100V 1A SOT89
 
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PBSS8110X,135 Specification

Product Attribute
Attribute Value
Manufacturer
Series
Automotive, AEC-Q100
Packaging
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 100mA, 1A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 250mA, 10V
Power - Max
2 W
Frequency - Transition
100MHz
Operating Temperature
150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
SOT-89

PBSS8110X,135 Description

Introduction to Nexperia PBSS8110X,135

The Nexperia PBSS8110X,135 is a high-performance PNP bipolar junction transistor (BJT) designed for use in a variety of electronic applications, particularly in switching and amplification circuits. It is a part of the PBSS8110 family, offering excellent performance characteristics, high power handling, and efficient switching capabilities.

This transistor is primarily used in low-power amplification, signal processing, and high-speed switching applications. Due to its high current handling, low saturation voltage, and fast switching capabilities, it is ideal for use in communication systems, automotive electronics, and various industrial applications where reliability and performance are critical.

Key Specifications

* Type: PNP Bipolar Junction Transistor (BJT)
* Maximum Collector-Emitter Voltage (Vce): -40V
* Maximum Collector Current (Ic): -1A
* Power Dissipation (Ptot): 1W
* DC Current Gain (hFE): 100 to 300
* Saturation Voltage (Vce(sat)): 0.2V at Ic = 100mA, Ib = 10mA
* Transition Frequency (fT): 150MHz at Vce = -10V, Ic = 10mA
* Operating Junction Temperature (Tj): -55°C to +150°C
* Package Type: SOT-223, which ensures compactness and good thermal performance.

Electrical Characteristics

The PBSS8110X,135 provides a low saturation voltage and high current gain, ensuring that it can operate efficiently even in low-voltage circuits. Its low Vce(sat) helps to minimize power loss, making it suitable for power-sensitive applications. The high transition frequency (fT) of 150 MHz indicates the transistor's ability to function well in high-speed circuits, offering fast response times in switching applications. The device can handle up to 1A of collector current, which makes it appropriate for medium-to-high-power applications.

The transistor’s high current gain (hFE) ensures efficient amplification in signal processing circuits, reducing the need for additional components in the design. This makes it an excellent choice for applications requiring efficient amplification in analog circuits, such as audio systems and communication devices.

Thermal and Reliability Features

With an operating junction temperature range from -55°C to +150°C, the PBSS8110X,135 is built to withstand harsh environments, making it ideal for automotive, industrial, and outdoor applications. Its ability to function within this broad temperature range ensures reliable operation in environments with fluctuating temperatures.

The power dissipation of 1W allows the transistor to manage moderate power requirements without excessive heat buildup, while its low thermal resistance ensures that heat can be dissipated effectively, allowing for stable performance even in high-temperature conditions.

Applications

The Nexperia PBSS8110X,135 is versatile and can be used in a wide variety of applications:

* Switching Circuits: The fast switching time and high current capability make it ideal for power switches in DC-DC converters, pulse circuits, and motor drives.
* Signal Amplification: The high current gain and low saturation voltage enable its use in low-power amplification circuits, particularly in audio and RF circuits.
* Automotive Electronics: Its ability to withstand high temperatures and high current makes it suitable for use in automotive circuits, such as in lighting controls, automotive sensor interfaces, and power management systems.
* Industrial Electronics: The PBSS8110X,135 is well-suited for industrial control systems where reliable and efficient switching and amplification are needed.
* Consumer Electronics: The transistor can also be employed in various consumer electronics applications requiring signal amplification or power switching.

Package and Mounting

The PBSS8110X,135 is housed in a compact SOT-223 package, which offers efficient thermal dissipation and is easy to mount on a PCB. The SOT-223 package ensures low parasitic inductance and resistance, making it ideal for high-frequency and fast-switching applications.

Conclusion

The Nexperia PBSS8110X,135 is a robust and reliable PNP transistor designed for a variety of switching and amplification applications. With its high current handling, low saturation voltage, and fast switching speed, it is ideal for use in automotive, industrial, and consumer electronics. The combination of high thermal stability, efficient power dissipation, and a compact SOT-223 package ensures that it can meet the demands of modern electronic designs, making it a versatile choice for engineers and designers across multiple industries.

PBSS8110X,135 Stock: 17300

History Price
$0.46000
Certificates
5.0 / 5.0
review stars
Author Icon
Simon Gagnon
Location Icon France
5 stars
2020-11-12 06:16
Very well received fast delivery I recommend the seller
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Daniele Gallo
Location Icon Italy
5 stars
2020-06-28 02:53
All ok, material arrived on schedule, seller recommended
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Renata Almeida
Location Icon Brazil
5 stars
2020-10-07 07:24
Arrived well packed, works perfectly.
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松本 健司
Location Icon Japan
5 stars
2020-06-28 20:58
It%27s arrive today!Thank you!Best regards,Mikio.
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Gintaras Andrius
Location Icon Lithuania
5 stars
2020-11-17 14:27
VERY GOOD PRODUCT

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