NTE110A
Active - DIODE GEN PURP 30V 150MA DO7
Description:
DIODE GEN PURP 30V 150MA DO7
NTE110A Specification
Product Attribute
Attribute Value
Voltage - DC Reverse (Vr) (Max)
30 V
Current - Average Rectified (Io)
150mA
Voltage - Forward (Vf) (Max) @ If
1 V @ 5 mA
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
65 μA @ 10 V
Mounting Type
Through Hole
Package / Case
DO-204AA, DO-7, Axial
Supplier Device Package
DO-7
Operating Temperature - Junction
-65 ℃ ~ 85 ℃
NTE110A Stock: 9350
5.0 / 5.0
2021-07-09 02:45
Well received, not tested yet
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
2021-06-10 07:32
Recu in 89 days, strip, to test
2021-11-23 06:50
All ok, thank you!
France
