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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Arrays  /  NTE Electronics NTE2018

NTE2018

Active Icon Active - IC-8 CHAN CMOS/TTL DR 18-PIN DIP
NTE2018
NTE2018
NTE Electronics
Manufacturer:
Mfr Part #
Datasheet:
Description:
IC-8 CHAN CMOS/TTL DR 18-PIN DIP
 
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NTE2018 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bag
Product Status
Active
Transistor Type
8 NPN Darlington
Current - Collector (Ic) (Max)
600mA
Voltage - Collector Emitter Breakdown (Max)
50V
Vce Saturation (Max) @ Ib, Ic
1.6V @ 350mA, 500A
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
1W
Frequency - Transition
-
Operating Temperature
-20 ℃ ~ 85 ℃ (TA)
Mounting Type
Through Hole
Package / Case
18-DIP (0.300", 7.62mm)
Supplier Device Package
18-PDIP

NTE2018 Stock: 37700

History Price
$3.66000
Certificates
5.0 / 5.0
review stars
Author Icon
Zeno Ferraro
Location Icon Italy
5 stars
2022-12-17 03:56
Great Store, all OK. Thank you.
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Cora Harris
Location Icon United States
5 stars
2023-04-06 14:43
not tried yet
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Oscar Eduardo
Location Icon Spain
5 stars
2023-03-29 01:36
All correct, good packaging. Need to be tested.
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Heloísa Lima Neto
Location Icon Brazil
5 stars
2023-03-28 19:45
Great product and according to the announcement informed by the seller, I recommend to everyone congratulations to the seller and the whole team
Author Icon
Joris van Dijk
Location Icon Netherlands
5 stars
2022-10-26 07:05
Have not used it yet, looks good.

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