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Home  /  Discrete Semiconductors  /  Transistors - FETs, MOSFETs - RF  /  NXP Semiconductors MRF101AN

MRF101AN

Active Icon Active - RF TRANSISTOR 100W TO-220
MRF101AN
MRF101AN
NXP Semiconductors
Manufacturer:
Mfr Part #
Datasheet:
Description:
RF TRANSISTOR 100W TO-220
 
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MRF101AN Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Tube
Product Status
Active
Transistor Type
LDMOS
Frequency
1.8MHz ~ 250MHz
Gain
21.1dB
Voltage - Test
50 V
Current Rating (Amps)
10μA
Noise Figure
-
Current - Test
100 mA
Power - Output
115W
Voltage - Rated
133 V
Mounting Type
-
Package / Case
TO-220-3
Supplier Device Package
TO-220-3

MRF101AN Description

The NXP Semiconductors MRF101AN is a high-performance RF power transistor designed for use in various applications, including RF amplification in the VHF and UHF frequency ranges. This device is particularly well-suited for use in linear and saturated amplifier configurations, making it a popular choice for both commercial and industrial applications.

### Key Features

1. High Power Output: The MRF101AN is capable of delivering high output power, making it suitable for applications that require significant amplification.

2. Wide Frequency Range: This transistor operates effectively in the VHF (Very High Frequency) and UHF (Ultra High Frequency) bands, typically from 30 MHz to 1 GHz.

3. High Efficiency: The MRF101AN is designed to provide high efficiency, which is crucial for reducing power consumption and heat generation in RF applications.

4. Robust Construction: The device is built to withstand harsh operating conditions, ensuring reliability and longevity in various environments.

5. Easy to Use: The MRF101AN is designed for straightforward integration into RF circuits, making it accessible for engineers and designers.

### Specifications

- Type: N-channel RF power transistor
- Package: Metal can package (TO-39)
- Frequency Range: 30 MHz to 1 GHz
- Output Power: Typically 100 W (depending on the application and configuration)
- Gain (hFE): Minimum 10 at 100 MHz
- Drain-Source Voltage (VDS): Maximum 65 V
- Gate-Source Voltage (VGS): Maximum ±20 V
- Drain Current (ID): Maximum 10 A
- Thermal Resistance (Junction to Case): 0.5 °C/W
- Operating Temperature Range: -65 °C to +150 °C
- Storage Temperature Range: -65 °C to +150 °C

### Applications

The MRF101AN is widely used in various applications, including:

- Broadcast Transmitters: Ideal for use in AM and FM radio transmitters, as well as television broadcasting.
- Industrial RF Heating: Suitable for applications in industrial heating processes that require RF energy.
- Communication Systems: Used in two-way radios, cellular base stations, and other communication devices.
- Military Applications: Its robustness and reliability make it suitable for military communication systems.

### Conclusion

The NXP Semiconductors MRF101AN is a versatile and powerful RF power transistor that meets the demands of various high-frequency applications. With its high output power, efficiency, and robust design, it is an excellent choice for engineers looking to implement reliable RF amplification in their projects. Whether in broadcasting, industrial applications, or communication systems, the MRF101AN continues to be a trusted component in the RF power transistor market.

MRF101AN Stock: 7600

History Price
$26.40000
Certificates
5.0 / 5.0
review stars
Author Icon
Lotte van der Veen
Location Icon Netherlands
5 stars
2021-11-23 06:50
All ok, thank you!
Author Icon
Hugo
Location Icon Spain
5 stars
2021-12-23 03:52
All right. Received within time
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Felipe Soto
Location Icon Spain
5 stars
2021-02-06 23:42
Received perfectly. Welded a unit on its corresponding printed circuit board working perfectly to replace a faulty unit on an Arduino Nano plate.
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Katharina Schneider
Location Icon Germany
5 stars
2021-08-04 23:28
2 weeks for delivery. The chips work fine
Author Icon
Paul Roy
Location Icon France
5 stars
2021-11-04 06:37
Corresponds to my use

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