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Home  /  Discrete Semiconductors  /  Diodes - Rectifiers - Single  /  onsemi BAT54HT1G

BAT54HT1G

Active Icon Active - DIODE SCHOTTKY 30V 200MA SOD323
BAT54HT1G
BAT54HT1G
onsemi
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Description:
DIODE SCHOTTKY 30V 200MA SOD323
 
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BAT54HT1G Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Tape & Reel (TR)
Product Status
Active
Diode Type
Schottky
Voltage - DC Reverse (Vr) (Max)
30 V
Current - Average Rectified (Io)
200mA
Voltage - Forward (Vf) (Max) @ If
800 mV @ 100 mA
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
5 ns
Current - Reverse Leakage @ Vr
2 μA @ 25 V
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323
Supplier Device Package
SOD-323
Operating Temperature - Junction
-55 ℃ ~ 150 ℃

BAT54HT1G Description

The Fairchild Semiconductor BAT54HT1G is a highly versatile and efficient Schottky diode designed for low-voltage, high-speed switching applications. It is widely used in various electronic devices such as power management systems, signal processing circuits, and RF applications, where fast switching times and low forward voltage drop are crucial for optimizing performance.

### Key Features

* Low Forward Voltage Drop: One of the standout features of the BAT54HT1G is its low forward voltage drop (typically 0.3V at 10mA), which ensures minimal power loss during operation, contributing to higher overall system efficiency.
* Fast Switching Speed: The BAT54HT1G is designed with high-speed switching capabilities, making it ideal for circuits requiring rapid changes between on and off states. This feature is especially valuable in digital logic circuits and RF applications where timing is critical.
* High Reverse Leakage Current: The reverse leakage current of the BAT54HT1G is relatively low, typically in the nanoampere range at higher reverse voltages, ensuring efficient operation in low-power applications where leakage currents are a concern.
* Low Capacitance: The BAT54HT1G features low junction capacitance, which is beneficial for RF and high-frequency applications, where high capacitance can lead to signal distortion or loss of efficiency.
* Small Package Size: Packaged in the SOT-23 form factor, the BAT54HT1G offers a compact solution that is perfect for space-constrained applications, such as portable electronic devices and high-density circuits.

### Specifications

* Type: Schottky Barrier Diode
* Package: SOT-23-3L
* Reverse Voltage (V\_R): 30V (maximum)
* Forward Current (I\_F): 200mA (maximum)
* Forward Voltage (V\_F): 0.45V (typical) at I\_F = 10mA
* Reverse Leakage Current (I\_R): 0.01µA at V\_R = 30V
* Capacitance (C\_J): 1.2pF (at V\_R = 0V, f = 1MHz)
* Junction Temperature (T\_J): -55°C to +150°C
* Storage Temperature (T\_stg): -55°C to +150°C

### Performance Characteristics

1. Thermal Characteristics: The BAT54HT1G is capable of operating over a wide temperature range, from -55°C to +150°C. This makes it suitable for harsh environmental conditions where thermal management is a key concern.

2. Small Signal Switching: Due to its high switching speed and low capacitance, the BAT54HT1G is ideal for small-signal applications, such as in signal rectification and voltage clamping.

3. Low Power Consumption: Its low forward voltage drop and minimal reverse leakage current contribute to reduced power consumption, making it suitable for energy-sensitive applications.

4. High Frequency Performance: The BAT54HT1G’s low capacitance and fast switching characteristics make it a preferred choice for high-frequency circuits, including RF and microwave applications.

5. Applications: Common applications for the BAT54HT1G include RF detectors, voltage clamping in signal lines, power supply circuits, reverse polarity protection, and low-voltage circuits where fast switching and low forward voltage are needed.

### Application Circuit Example

A typical application of the BAT54HT1G might be in a reverse polarity protection circuit. In such a circuit, the BAT54HT1G is placed in series with the load, preventing current from flowing if the power supply is connected incorrectly. The low forward voltage drop of the BAT54HT1G ensures minimal loss during proper operation.

### Reliability

The BAT54HT1G features robust construction, providing reliable performance even in demanding environments. With a maximum junction temperature of 150°C, it can withstand high operating temperatures, ensuring longevity in various electronic systems. The device’s reverse voltage of 30V provides a safe operating margin for most consumer and industrial applications.

### Conclusion

Overall, the Fairchild Semiconductor BAT54HT1G Schottky diode stands out due to its low forward voltage, high-speed switching, low reverse leakage, and compact package. These features make it a highly reliable and efficient choice for a wide range of applications, from portable devices to high-frequency circuits. The BAT54HT1G is a valuable component for improving the performance and efficiency of both digital and analog systems.

BAT54HT1G Stock: 10340

History Price
$0.24000
Certificates
5.0 / 5.0
review stars
Author Icon
Henrique Lima
Location Icon Brazil
5 stars
2020-06-10 18:19
Estir products I recommend foncionou perfect Great seller
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Valentina Rinaldi
Location Icon Italy
5 stars
2020-06-09 05:01
Quick in shipment and delivery.
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Zofia Czarnecka
Location Icon Poland
5 stars
2020-01-12 12:22
IGBT transistors not detected SA for testerach besde plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, transistors with scattered poj
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Prof. Klaus Bauer
Location Icon Germany
5 stars
2019-11-02 09:08
Received, delivery 1.5 month. Didn't check, hope OK.
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Júnior
Location Icon Brazil
5 stars
2019-11-22 04:21
Still not installed, but am happy with the purchase.

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BAT54HT1G
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