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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  onsemi BU406

BU406

Active Icon Obsolete - TRANS NPN 200V 7A TO220-3
BU406
BU406
onsemi
Manufacturer:
Mfr Part #
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Description:
TRANS NPN 200V 7A TO220-3
 
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BU406 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
7 A
Voltage - Collector Emitter Breakdown (Max)
200 V
Vce Saturation (Max) @ Ib, Ic
1V @ 500mA, 5A
Current - Collector Cutoff (Max)
5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
60 W
Frequency - Transition
10MHz
Operating Temperature
150 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3

BU406 Description

Overview of STMicroelectronics BU406

The STMicroelectronics BU406 is a high-performance N-channel MOSFET designed for various applications, particularly in power management and switching. This device is well-suited for use in consumer electronics, automotive applications, and industrial systems due to its efficient operation and reliable performance. The BU406 features a low on-resistance and fast switching capabilities, making it ideal for applications requiring efficient power control.

Key Specifications

- Type: N-channel MOSFET
- Maximum Drain-Source Voltage (Vds): 60 V
- Maximum Gate-Source Voltage (Vgs): ±20 V
- Continuous Drain Current (Id): 30 A at a case temperature of 25°C
- Pulsed Drain Current (Id,pulse): 100 A
- On-Resistance (Rds(on)): Typically around 0.025 Ω at Vgs = 10 V
- Total Gate Charge (Qg): Approximately 40 nC at Vgs = 10 V
- Operating Junction Temperature Range: -55°C to +150°C

Electrical Characteristics

The BU406 exhibits several key electrical characteristics that enhance its performance:

- Threshold Voltage (Vgs(th)): The gate-source threshold voltage typically ranges from 2.0 V to 4.0 V, which indicates the minimum gate voltage required to turn the device on.

- Reverse Body Diode Characteristics: The built-in body diode allows for efficient current flow in the reverse direction, with a forward voltage drop typically around 1.5 V.

These characteristics ensure that the BU406 can effectively handle both high-speed switching and continuous conduction tasks.

Applications

The versatility of the BU406 makes it suitable for a wide range of applications:

1. Power Management Circuits: Used in DC-DC converters and power supplies where efficiency is critical.

2. Motor Control: Ideal for driving small motors in consumer appliances or robotics due to its ability to handle high currents efficiently.

3. Lighting Control: Commonly used in LED drivers where precise control over brightness is required.

4. Automotive Applications: Suitable for automotive power management systems, including battery management and load switching.

5. Industrial Equipment: Employed in industrial automation systems for controlling actuators and sensors effectively.

Thermal Considerations

Thermal management is crucial when using the BU406 to ensure reliable operation:

- Thermal Resistance (Junction-to-Ambient): The thermal resistance is approximately 62 °C/W when mounted on an appropriate PCB layout, allowing designers to calculate temperature rise under load conditions accurately.

- Power Dissipation Capability: With a maximum power dissipation of approximately 50 W at a case temperature of 25°C, careful consideration must be given to heat sinking or other cooling methods during design.

Mechanical Characteristics

The BU406 is available in various package types, including TO-220 and DPAK, which offer benefits such as:

- Size Efficiency: The compact design allows for space-efficient layouts on PCBs while maintaining robust performance characteristics.

- Heat Dissipation Features: Packages like TO-220 provide excellent thermal conductivity, enabling effective heat dissipation during operation.

Design Considerations

When integrating the BU406 into electronic designs, engineers should consider several factors:

1. Gate Drive Requirements: Proper gate drive circuitry should be implemented to ensure fast switching times and minimize losses during operation.

2. PCB Layout Practices: Employing good PCB layout practices helps reduce parasitic inductance and capacitance, which can adversely affect switching performance.

3. Protection Against Overvoltage: Implementing protection strategies such as snubber circuits or TVS diodes can safeguard against voltage spikes that may occur during operation.

4. Load Characteristics: Understanding the load characteristics is essential for selecting the appropriate MOSFET based on current requirements and thermal considerations.

Conclusion

The STMicroelectronics BU406 N-channel MOSFET provides an effective solution for various applications requiring efficient power management and reliable performance. With its impressive specifications—such as low on-resistance, high current handling capability, and robust thermal performance—it serves as an excellent choice for both professional engineers and hobbyists looking to implement effective switching solutions in their designs. Its adaptability across different fields—including consumer electronics, automotive systems, and industrial automation—highlights its importance as a versatile component in modern electronic systems.

BU406 Stock: 42350

History Price
Obsolete
Certificates
5.0 / 5.0
review stars
Author Icon
Stijn de Groot
Location Icon Netherlands
5 stars
2023-02-27 04:25
Super fast delivery
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Irena Kowalczyk
Location Icon Poland
5 stars
2023-02-28 12:17
Fast shipping, all OK. Recommend.
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Jeanne Masson
Location Icon France
5 stars
2023-02-27 05:44
I recommend this seller.... All are ok.
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Zuzanna Kaczmarek
Location Icon Poland
5 stars
2023-02-26 12:15
Quickly provided well packed good quality
Author Icon
Natasza Zawisza
Location Icon Poland
5 stars
2023-02-27 07:35
Shipment received, transistors not sprawdza?em.

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