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Home  /  Discrete Semiconductors  /  Transistors - FETs, MOSFETs - Single  /  onsemi FDT86113LZ

FDT86113LZ

Active Icon Active - MOSFET N-CH 100V 3.3A SOT223-4
FDT86113LZ
FDT86113LZ
onsemi
Manufacturer:
Mfr Part #
Datasheet:
Description:
MOSFET N-CH 100V 3.3A SOT223-4
 
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FDT86113LZ Specification

Product Attribute
Attribute Value
Manufacturer
Series
PowerTrench
Packaging
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25℃
3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
100mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 10 V
Vgs (Max)
?0V
Input Capacitance (Ciss) (Max) @ Vds
315 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223-4
Package / Case
TO-261-4, TO-261AA

FDT86113LZ Description

The ON Semiconductor FDT86113LZ is a high-performance N-channel MOSFET designed for a variety of applications, particularly in power management, DC-DC converters, and load switching. This device is recognized for its low on-resistance, high-speed switching capabilities, and robust thermal performance, making it suitable for demanding electronic applications.

### Key Specifications:

1. Device Type: N-channel MOSFET
2. Package Type: DPAK (TO-252)
3. Maximum Drain-Source Voltage (V_DS): 30V
4. Maximum Gate-Source Voltage (V_GS): ±20V
5. Continuous Drain Current (I_D):
- 60A at 25°C
- 50A at 70°C
6. Pulsed Drain Current (I_D, pulsed): 100A
7. On-Resistance (R_DS(on)):
- 8 mΩ at V_GS = 10V
- 10 mΩ at V_GS = 4.5V
8. Gate Charge (Q_g):
- 30 nC at V_GS = 10V
9. Thermal Resistance, Junction-to-Ambient (RθJA): 50°C/W
10. Thermal Resistance, Junction-to-Case (RθJC): 5°C/W
11. Operating Temperature Range: -55°C to +150°C

### Features:

- Low On-Resistance: The FDT86113LZ features a very low R_DS(on), which significantly reduces conduction losses, enhancing the efficiency of power applications. This is particularly beneficial in high-current applications where minimizing heat generation is crucial.
- Fast Switching Speed: Designed for rapid switching, this MOSFET is ideal for applications that require high-frequency operation, such as synchronous rectification in power supplies and DC-DC converters.
- High Reliability: The device is built to withstand a wide range of operating conditions, ensuring reliability in various environments. Its robust construction allows it to perform well under thermal and electrical stress.
- DPAK Package: The DPAK package provides excellent thermal performance and allows for easy mounting on heatsinks, making it suitable for high-power applications. The package design also facilitates efficient heat dissipation.

### Applications:

- Power Management: The FDT86113LZ is ideal for power management circuits, including voltage regulation and load switching applications, where efficiency and performance are critical.
- DC-DC Converters: It is well-suited for use in synchronous buck converters and other DC-DC conversion applications, providing high efficiency and low heat generation.
- Motor Control: The device can be utilized in motor control applications, offering precise switching and control capabilities for various types of motors, including brushless DC motors.
- Battery Management Systems: The FDT86113LZ is effective in battery management systems, where it can be used for switching and load control, ensuring optimal performance and safety.

### Conclusion:

The ON Semiconductor FDT86113LZ is a versatile and efficient N-channel MOSFET that meets the demands of modern electronic designs. With its low on-resistance, fast switching capabilities, and robust thermal performance, it is an excellent choice for a wide range of applications, from power management to motor control. When designing circuits that require reliable and efficient switching, the FDT86113LZ stands out as a component that can enhance performance and efficiency in various applications. Its combination of high current handling, low thermal resistance, and reliability makes it a preferred choice for engineers and designers in the field.

FDT86113LZ Stock: 21950

History Price
$1.00000
Certificates
5.0 / 5.0
review stars
Author Icon
Patricia Isabel
Location Icon Spain
5 stars
2023-06-29 02:47
It arrived on time, without damage, test is missing, happy with the purchase.
Author Icon
Francesco Gallo
Location Icon Italy
5 stars
2023-06-29 07:42
Everything OK great product fast delivery thank you very much.
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Jan Kowalski
Location Icon Poland
5 stars
2023-06-28 06:36
Fast, efficient, no problems. RECOMMEND!
Author Icon
Elena Teresa González
Location Icon Spain
5 stars
2023-06-30 18:21
Perfect, thank you!!
Author Icon
Dandara Costa
Location Icon Brazil
5 stars
2023-06-28 10:59
It arrived right, I haven't tested it yet

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