FSDM0365RNB

Overview of onsemi FSDM0365RNB

The FSDM0365RNB is a high-performance integrated power MOSFET designed by onsemi, specifically tailored for use in power supply applications. This device is part of the FSDM series, which is known for its efficiency and reliability in various power management scenarios. The FSDM0365RNB is particularly suitable for applications such as switch-mode power supplies (SMPS), LED drivers, and other power conversion systems.

Key Specifications

- Device Type: The FSDM0365RNB is a N-channel MOSFET, which is commonly used for switching and amplification in electronic circuits.

- Maximum Drain-Source Voltage (V_DS): The device has a maximum V_DS rating of 650V, allowing it to handle high-voltage applications effectively.

- Continuous Drain Current (I_D): The FSDM0365RNB can support a continuous drain current of up to 3.6A at a temperature of 25°C, making it suitable for moderate power applications.

- Pulsed Drain Current (I_D,pulse): The pulsed drain current rating is 12A, which is beneficial for applications that require short bursts of high current.

- On-Resistance (R_DS(on)): The on-resistance is typically around 0.65Ω at a gate-source voltage (V_GS) of 10V, which contributes to low conduction losses and high efficiency during operation.

- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 2V to 4V, ensuring that the MOSFET can be effectively driven by standard logic levels.

- Total Gate Charge (Q_g): The total gate charge is approximately 20 nC, which is important for determining the switching speed and efficiency of the device in high-frequency applications.

- Thermal Resistance: The thermal resistance from junction to case (R_θJC) is around 5 °C/W, which is crucial for managing heat dissipation in high-power applications.

Package and Thermal Characteristics

The FSDM0365RNB is available in a DPAK package, which is designed for surface-mount technology (SMT). This package type is advantageous for space-constrained applications and provides good thermal performance. The thermal characteristics include:

- Operating Temperature Range: The device operates effectively within a temperature range of -55°C to +150°C, making it suitable for harsh environments.

- Maximum Junction Temperature (T_J): The maximum junction temperature is rated at 150°C, allowing for reliable operation under high thermal stress.

Applications

The FSDM0365RNB is widely used in various applications, including:

- Switch-Mode Power Supplies (SMPS): Its high voltage and current ratings make it ideal for use in power supply circuits, providing efficient power conversion.

- LED Drivers: The MOSFET is suitable for driving LED arrays, ensuring efficient power management and control.

- Motor Control: The device can be used in motor control applications, providing efficient switching for driving motors in industrial and automotive systems.

- Power Management Systems: The FSDM0365RNB is applicable in various power management systems, ensuring reliable operation and efficiency in power distribution.

Conclusion

The onsemi FSDM0365RNB is a robust and efficient N-channel MOSFET that meets the demands of modern power management applications. With its high voltage and current ratings, low on-resistance, and reliable thermal performance, it is an excellent choice for engineers looking to design efficient and reliable electronic systems. Its versatility across various applications makes it a valuable component in the field of power electronics.