NVMYS025N06CLTWG

Active - MOSFET N-CH 60V 8.5A/21A 4LFPAK
Description:
MOSFET N-CH 60V 8.5A/21A 4LFPAK
NVMYS025N06CLTWG Specification
Product Attribute
Attribute Value
Series
Automotive, AEC-Q101
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25℃
8.5A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
27.5mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id
2V @ 13μA
Gate Charge (Qg) (Max) @ Vgs
5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
Power Dissipation (Max)
3.8W (Ta), 24W (Tc)
Operating Temperature
-55 ℃ ~ 175 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LFPAK4 (5x6)
Package / Case
SOT-1023, 4-LFPAK
NVMYS025N06CLTWG Description
## Overview of onsemi NVMYS025N06CLTWG
The onsemi NVMYS025N06CLTWG is a high-efficiency N-channel MOSFET designed for various applications, including power management, automotive systems, and industrial controls. This device is part of onsemi's enhanced portfolio aimed at optimizing power efficiency and thermal performance, making it an attractive choice for modern electronic designs.
## Key Specifications
### Electrical Characteristics:
- Maximum Drain-Source Voltage (V_DS): 60 V
- Maximum Gate-Source Voltage (V_GS): ±20 V
- Continuous Drain Current (I_D) at 25°C: 30 A
- Pulsed Drain Current (I_DM): 90 A
- R_DS(on) at V_GS = 10V: 25 mΩ
- R_DS(on) at V_GS = 4.5V: 30 mΩ
### Thermal Characteristics:
- Maximum Junction Temperature (T_J): 150°C
- Thermal Resistance, Junction to Ambient (RθJA): 62.5°C/W
- Thermal Resistance, Junction to Case (RθJC): 1.5°C/W
### Switching Characteristics:
- Total Gate Charge (Q_g) at V_GS = 10V: 35 nC
- Rise Time (t_r): 50 ns
- Fall Time (t_f): 20 ns
- Turn-On Delay Time (t_d(on)): 15 ns
- Turn-Off Delay Time (t_d(off)): 30 ns
### Package Information:
- Package Type: DPAK
- Number of Pins: 5
- Dimensions: 8.7 mm x 6.5 mm x 5.3 mm
- Weight: 2.1 g
## Features and Advantages
### High Efficiency
The NVMYS025N06CLTWG is engineered to offer low R_DS(on) values, minimizing conduction losses. This leads to higher efficiency in power circuits, particularly in applications where heat dissipation is a concern.
### Robust Performance
With a high maximum junction temperature of 150°C, this MOSFET is capable of operating reliably in demanding environments. This feature is crucial for automotive and industrial applications where thermal stresses are prevalent.
### Versatile Applications
This MOSFET fits a wide range of applications, including:
- Power Management: Efficient switching in power supplies for computers and consumer electronics.
- Automotive Systems: Control circuits in electric and hybrid vehicles, enhancing energy efficiency.
- Industrial Controls: Suitable for motor drives and automated systems.
### Compact Design
The DPAK package type allows for a compact footprint on PCB designs, enabling more efficient use of space in various applications. Its relatively low profile allows it to be integrated into systems with space constraints.
## Applications
The onsemi NVMYS025N06CLTWG MOSFET is suitable for various applications, including:
- DC-DC Converters: Ideal for power management systems where compact and efficient components are essential.
- Lighting Control: Used in LED drivers to improve performance and energy savings.
- Motor Drivers: Effective for driving brushless DC motors in automotive and industrial applications.
- Switching Power Supplies: Helps improve efficiency in both offline and inline applications.
## Conclusion
The onsemi NVMYS025N06CLTWG N-channel MOSFET stands out due to its combination of high efficiency, robust performance characteristics, and versatility. It is engineered to meet the demands of modern power management applications, making it an ideal choice for various sectors, including automotive, industrial, and consumer electronics. Its compact design and excellent thermal performance further enhance its usability in diverse electronic systems.