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Home  /  Discrete Semiconductors  /  Diodes - Rectifiers - Single  /  Panasonic DB2J31400L

DB2J31400L

Active Icon Discontinued - DIODE SCHOT 30V 30MA SMINI2-F5-B
DB2J31400L
DB2J31400L
Panasonic
Manufacturer:
Mfr Part #
Datasheet:
Description:
DIODE SCHOT 30V 30MA SMINI2-F5-B
 
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DB2J31400L Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Tape & Reel (TR)
Product Status
Discontinued
Diode Type
Schottky
Voltage - DC Reverse (Vr) (Max)
30 V
Current - Average Rectified (Io)
30mA
Voltage - Forward (Vf) (Max) @ If
1 V @ 30 mA
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
1 ns
Current - Reverse Leakage @ Vr
300 nA @ 30 V
Capacitance @ Vr, F
1.5pF @ 10V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-90, SOD-323F
Supplier Device Package
SMini2-F5-B
Operating Temperature - Junction
125 ℃ (Max)

DB2J31400L Description

The Panasonic DB2J31400L is a high-performance, low-voltage, dual N-channel MOSFET designed for various applications in power management and switching. This device is particularly well-suited for use in power supplies, motor control, and other applications requiring efficient switching and low on-resistance characteristics. The DB2J31400L is part of Panasonic%27s extensive portfolio of semiconductor devices, providing engineers with reliable components for their designs.

### Key Features

1. Dual N-Channel Configuration: The DB2J31400L features two N-channel MOSFETs in a single package, allowing for compact designs and simplified circuit layouts.

2. Low On-Resistance (RDS(on)): The device boasts a low on-resistance, which minimizes conduction losses and improves overall efficiency in power applications. This is particularly important in applications where heat dissipation is a concern.

3. High-Speed Switching: The MOSFET is designed for fast switching speeds, making it suitable for high-frequency applications. This characteristic helps to reduce switching losses and improve the overall efficiency of the circuit.

4. Wide Gate-Source Voltage Range: The device can operate with a gate-source voltage range of ±20V, providing flexibility in various system designs.

5. Thermal Performance: The DB2J31400L is designed to handle significant thermal loads, with a high maximum junction temperature rating, ensuring reliable operation in demanding environments.

6. Compact Package: The device is available in a compact DPAK package, which provides excellent thermal dissipation and mechanical stability, making it suitable for space-constrained applications.

### Specifications

- Type: Dual N-Channel MOSFET
- Maximum Drain-Source Voltage (VDS): 40V
- Maximum Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID): 20A (per channel)
- Pulsed Drain Current (IDM): 60A (per channel)
- On-Resistance (RDS(on)):
- 0.015Ω (at VGS = 10V)
- 0.025Ω (at VGS = 4.5V)
- Gate Threshold Voltage (VGS(th)): 1V to 3V
- Total Gate Charge (Qg): 20 nC (typical)
- Maximum Junction Temperature (TJ): 150°C
- Package Type: DPAK
- Weight: Approximately 1.5 grams

### Applications

The Panasonic DB2J31400L is suitable for a wide range of applications, including:

- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation and power conversion.
- Motor Control: Ideal for driving DC motors and brushless DC motors in various industrial and consumer applications.
- LED Drivers: Can be used in LED lighting applications for efficient power management.
- Battery Management Systems: Suitable for use in battery charging and protection circuits.

### Conclusion

The Panasonic DB2J31400L is a versatile and reliable dual N-channel MOSFET that meets the demands of modern power management applications. With its low on-resistance, high-speed switching capabilities, and robust design features, it is an excellent choice for engineers looking to enhance the efficiency and reliability of their designs. For more detailed information, including application circuits and further specifications, refer to the official Panasonic datasheet for the DB2J31400L.

DB2J31400L Stock: 24250

History Price
Discontinued at Digi-Key
Certificates
5.0 / 5.0
review stars
Author Icon
Tânia Maria
Location Icon Brazil
5 stars
2021-07-09 20:10
Still not auditioned but very fast
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Léonie Caron
Location Icon France
5 stars
2021-08-02 07:24
Felt marking on the packaging not very readable (confusion possible ) ! Without that, conform! Thank you seller!
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Danuta Krawczyk
Location Icon Poland
5 stars
2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we
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Charles Reed
Location Icon United States
5 stars
2021-12-31 23:06
Good product and work correctly .
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Quentin Giraud
Location Icon France
5 stars
2021-07-09 02:45
Well received, not tested yet

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