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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - RF  /  Renesas Electronics NE58219-T1-A

NE58219-T1-A

Active Icon Last Time Buy - NPN SILICON AMPLIFIER AND OSCILL
NE58219-T1-A
NE58219-T1-A
Renesas Electronics
Manufacturer:
Mfr Part #
Datasheet:
Description:
NPN SILICON AMPLIFIER AND OSCILL
 
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NE58219-T1-A Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Tape & Reel (TR)
Product Status
Last Time Buy
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
5GHz
Noise Figure (dB Typ @ f)
-
Gain
5dB
Power - Max
100mW
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 5mA, 5V
Current - Collector (Ic) (Max)
60mA
Operating Temperature
125 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Supplier Device Package
SC-75 (USM)

NE58219-T1-A Stock: 35390

History Price
$0.80000
Certificates
5.0 / 5.0
review stars
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Quentin Giraud
Location Icon France
5 stars
2021-07-09 02:45
Well received, not tested yet
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Jukka Laakso
Location Icon Finland
5 stars
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
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Kęstutis Darius
Location Icon Lithuania
5 stars
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
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Justine Perrin
Location Icon France
5 stars
2021-06-10 07:32
Recu in 89 days, strip, to test
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Lotte van der Veen
Location Icon Netherlands
5 stars
2021-11-23 06:50
All ok, thank you!

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