NE85633-T1B-A

Last Time Buy - SAME AS 2SC3356 NPN SILICON AMPL
Description:
SAME AS 2SC3356 NPN SILICON AMPL
NE85633-T1B-A Specification
Product Attribute
Attribute Value
Packaging
Tape & Reel (TR)
Product Status
Last Time Buy
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
7GHz
Noise Figure (dB Typ @ f)
1.1dB @ 1GHz
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 20mA, 10V
Current - Collector (Ic) (Max)
100mA
Operating Temperature
150 ℃ (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
3-MINIMOLD
NE85633-T1B-A Description
The Renesas Electronics NE85633-T1B-A is a high-performance RF (Radio Frequency) amplifier designed for various applications in the telecommunications and wireless communication sectors. This device is particularly well-suited for use in mobile communication systems, base stations, and other RF applications where high gain and efficiency are essential. Below is a detailed introduction to the NE85633-T1B-A, including its specifications and parameters.
### Overview
The NE85633-T1B-A is a low-noise amplifier (LNA) that operates in the frequency range of 1.5 GHz to 3.0 GHz. It is designed to provide high gain while maintaining low noise figure, making it ideal for applications that require signal amplification with minimal degradation of the signal quality. The device is housed in a compact package, making it suitable for space-constrained applications.
### Key Specifications
1. Frequency Range: The NE85633-T1B-A operates effectively within a frequency range of 1.5 GHz to 3.0 GHz, making it suitable for various RF applications, including cellular and satellite communications.
2. Gain: The amplifier provides a typical gain of approximately 20 dB. This high gain allows for effective amplification of weak signals, ensuring that the output signal is strong enough for further processing.
3. Noise Figure (NF): The device features a low noise figure of around 1.5 dB. This low NF is crucial for maintaining signal integrity, especially in applications where weak signals need to be amplified without introducing significant noise.
4. Output Power: The NE85633-T1B-A can deliver an output power of up to +20 dBm. This output power level is sufficient for driving various RF components and ensuring effective transmission.
5. Supply Voltage (VCC): The amplifier operates with a supply voltage of +5 V, which is standard for many RF applications. This allows for easy integration into existing systems.
6. Current Consumption: The typical current consumption of the NE85633-T1B-A is around 100 mA. This moderate current draw helps in maintaining power efficiency while providing the necessary performance.
7. Package Type: The NE85633-T1B-A is available in a compact surface-mount package (SOT-89), which facilitates easy integration into printed circuit boards (PCBs) and helps save space in design layouts.
### Applications
The NE85633-T1B-A is widely used in various applications, including:
- Mobile Communication Systems: Its high gain and low noise figure make it ideal for use in mobile base stations and handsets, where signal amplification is critical for maintaining communication quality.
- Satellite Communication: The amplifier is suitable for satellite transceivers, where it can amplify signals received from satellites with minimal noise introduction.
- Wireless Communication: The NE85633-T1B-A can be used in various wireless communication devices, including Wi-Fi routers and Bluetooth transmitters, to enhance signal strength and quality.
- Test Equipment: It is also utilized in RF test equipment, where precise signal amplification is required for accurate measurements and testing.
### Conclusion
The Renesas Electronics NE85633-T1B-A is a versatile and reliable RF amplifier that meets the demands of modern telecommunications and wireless communication applications. With its high gain, low noise figure, and compact package, it is an excellent choice for engineers looking to design efficient and effective RF systems. Whether used in mobile communication, satellite systems, or wireless devices, the NE85633-T1B-A provides the performance and reliability needed for today%27s demanding RF applications. Its combination of features makes it a preferred choice for many designers in the field of RF electronics.
NE85633-T1B-A Stock: 15270
5.0 / 5.0

2021-06-01 09:35
Very good I can only recommend

2021-04-17 07:13
Very satisfied, good seller.

2021-07-09 20:10
Still not auditioned but very fast

2021-08-02 07:24
Felt marking on the packaging not very readable (confusion possible ) ! Without that, conform! Thank you seller!

2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we