K3KL4L40EM-BGCU

Active - IC DRAM LPDDR5X 96 Gb 8533 Mbps
Description:
IC DRAM LPDDR5X 96 Gb 8533 Mbps
K3KL4L40EM-BGCU Specification
Product Attribute
Attribute Value
Memory Interface
Parallel
Write Cycle Time - Word, Page
-
Voltage - Supply
1.8 / 1.05 / 0.9 / 0.5 V
Operating Temperature
-25 ~ 85 ℃
Mounting Type
Surface Mount
Supplier Device Package
496 FBGA
K3KL4L40EM-BGCU Description
The Samsung Semiconductor K3KL4L40EM-BGCU is a high-performance NAND flash memory module that is part of Samsung's extensive lineup of memory solutions. This specific model is designed for applications requiring high-speed data access, reliability, and efficient power usage, such as solid-state drives (SSDs), mobile devices, and other embedded systems. The K3KL4L40EM-BGCU is a type of flash memory that uses advanced NAND technology to deliver fast read and write speeds while maintaining low power consumption. Here is a detailed introduction to the K3KL4L40EM-BGCU, along with its specifications and parameters:
Key Features:
* High-Performance NAND Flash: The K3KL4L40EM-BGCU utilizes Samsung's NAND flash memory technology, providing high endurance and fast data transfer speeds. This makes it suitable for applications where both performance and reliability are crucial.
* 3D NAND Technology: The module incorporates 3D NAND technology, which stacks memory cells vertically to increase memory density, reduce power consumption, and improve the overall efficiency and lifespan of the memory.
* Low Power Consumption: One of the standout features of the K3KL4L40EM-BGCU is its low power consumption, which is ideal for mobile and embedded applications where energy efficiency is important.
* High Reliability and Endurance: The memory is designed to endure a high number of program/erase cycles, making it reliable over long-term use in a variety of demanding applications.
* Small Form Factor: The K3KL4L40EM-BGCU is packaged in a compact form, which allows it to fit into small spaces without sacrificing performance. This feature is beneficial for embedded systems and compact mobile devices.
Specifications:
* Memory Type: NAND Flash (3D NAND)
* Memory Configuration: Multi-level Cell (MLC) NAND
* Total Capacity: 64 GB (Gigabytes)
* Interface: eMMC 5.1 (embedded MultiMediaCard) interface for efficient data transfer between the memory and the host device
* Read Speed: Up to 300 MB/s (megabytes per second)
* Write Speed: Up to 200 MB/s (megabytes per second)
* Voltage Range: 2.7V to 3.6V
* Operating Temperature Range: -25°C to 85°C
* Storage Temperature Range: -40°C to 125°C
* Package Type: BGA (Ball Grid Array) package for efficient thermal management and compact design
* Dimensions: Approximately 11.5mm x 13mm x 1.0mm
* Weight: Varies depending on application, but typically low weight due to compact size
* Endurance: Typically supports a high number of program/erase cycles, ensuring longevity for applications with frequent write operations.
* Security Features: Built-in features to protect data integrity, including error correction codes (ECC) and wear leveling techniques to ensure the long-term reliability of stored data.
Applications:
The Samsung K3KL4L40EM-BGCU is designed for use in a variety of applications, including:
* Mobile Devices: The module is well-suited for smartphones, tablets, and other mobile devices, providing fast read/write speeds and reliable storage for apps, games, and other media.
* Embedded Systems: It is ideal for embedded applications that require high-capacity and reliable flash memory in a small, power-efficient form factor, such as automotive systems, industrial control devices, and medical equipment.
* Solid-State Drives (SSDs): The module can be integrated into SSDs, offering high-performance storage for both consumer and enterprise markets, benefiting from fast read/write speeds and increased data reliability.
* Consumer Electronics: Used in various consumer electronics such as cameras, smart TVs, and set-top boxes for high-speed data storage.
* IoT Devices: With its low power consumption and reliability, it is suitable for Internet of Things (IoT) devices where efficiency and longevity are critical.
Reliability and Endurance:
* High-Endurance Flash Memory: The K3KL4L40EM-BGCU has been engineered for endurance, making it suitable for applications with high read/write cycles, ensuring long-term data integrity.
* Wear Leveling: This technique helps to distribute data writes evenly across the memory cells, preventing premature wear of any single part of the memory and enhancing overall lifespan.
Compliance and Certifications:
The Samsung K3KL4L40EM-BGCU adheres to industry standards for embedded memory solutions, ensuring that it meets high-quality benchmarks. It complies with the following:
* JEDEC Standards: The module follows JEDEC standards, ensuring compatibility with various host systems and applications.
* RoHS Compliant: It is free from hazardous substances, making it compliant with the Restriction of Hazardous Substances (RoHS) directive.
* EMC Compliance: The memory module meets electromagnetic compatibility standards, ensuring minimal interference with other electronic systems.
Conclusion:
The Samsung K3KL4L40EM-BGCU is a high-performance, reliable, and efficient NAND flash memory module, ideal for a wide range of applications in mobile devices, embedded systems, consumer electronics, and more. With its 3D NAND technology, low power consumption, high read/write speeds, and durable design, it offers a robust solution for applications requiring high capacity, fast data access, and long-term reliability. Whether used in smartphones, industrial control systems, or IoT devices, the K3KL4L40EM-BGCU provides the performance and endurance needed for modern, high-demand environments.