K4A8G165WB-BCWE

Active - IC DRAM DDR4 8 Gb 3200 Mbps
Description:
IC DRAM DDR4 8 Gb 3200 Mbps
K4A8G165WB-BCWE Specification
Product Attribute
Attribute Value
Memory Organization
512M x 16
Memory Interface
Parallel
Write Cycle Time - Word, Page
-
Operating Temperature
0 ~ 85 ℃
Mounting Type
Surface Mount
Supplier Device Package
96 FBGA
K4A8G165WB-BCWE Description
The Samsung Semiconductor K4A8G165WB-BCWE is a high-performance DRAM (Dynamic Random Access Memory) module designed for various applications, including mobile devices, consumer electronics, and computing systems. This memory chip is part of Samsung%27s extensive portfolio of memory solutions, known for their reliability, speed, and efficiency.
### Key Features:
1. High Density: The K4A8G165WB-BCWE offers a density of 8 Gb (gigabits), allowing for substantial data storage in a compact form factor. This high density is particularly beneficial for applications requiring large amounts of memory in limited space.
2. DDR4 Technology: This memory module utilizes DDR4 (Double Data Rate 4) technology, which provides improved performance and efficiency compared to previous generations. DDR4 offers higher data transfer rates and lower power consumption, making it ideal for modern applications.
3. Data Rate: The K4A8G165WB-BCWE supports data rates of up to 2400 MT/s (megatransfers per second), enabling fast data access and processing. This high data rate is essential for applications that require quick response times and efficient multitasking.
4. Low Power Consumption: Designed for energy efficiency, the K4A8G165WB-BCWE operates at a voltage of 1.2V, which is lower than previous DDR generations. This reduced voltage helps to extend battery life in portable devices and lowers overall power consumption in computing systems.
5. Wide Operating Temperature Range: The memory chip is designed to operate effectively in a wide temperature range, making it suitable for various environments and applications.
### Specifications:
- Memory Type: DDR4 SDRAM
- Density: 8 Gb (1 GB x 8)
- Data Rate: Up to 2400 MT/s
- Operating Voltage: 1.2V
- Package Type: FBGA (Fine Ball Grid Array)
- Number of Banks: 16 banks
- Row Addressing: 16K
- Column Addressing: 1024
- Operating Temperature Range: -40°C to +95°C (commercial grade)
- Refresh Rate: 1x/2x/4x refresh
### Applications:
The Samsung K4A8G165WB-BCWE is suitable for a wide range of applications, including:
- Mobile Devices: Used in smartphones and tablets to provide fast and efficient memory for applications and multitasking.
- Consumer Electronics: Ideal for smart TVs, gaming consoles, and other electronic devices that require high-speed memory.
- Computing Systems: Employed in laptops and desktops to enhance performance and responsiveness in computing tasks.
- Embedded Systems: Suitable for various embedded applications where reliable and efficient memory is essential.
### Conclusion:
The Samsung Semiconductor K4A8G165WB-BCWE is a high-performance DDR4 DRAM module that meets the demands of modern electronic applications. With its high density, fast data rates, low power consumption, and wide operating temperature range, it is an excellent choice for developers looking to enhance the performance and efficiency of their devices. Whether in mobile devices, consumer electronics, or computing systems, the K4A8G165WB-BCWE stands out as a reliable and efficient memory solution in Samsung%27s extensive semiconductor portfolio.
K4A8G165WB-BCWE Stock: 23110
5.0 / 5.0

2021-12-31 23:06
Good product and work correctly .

2021-07-09 02:45
Well received, not tested yet

2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.

2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.

2021-06-10 07:32
Recu in 89 days, strip, to test