K4AAG165WB-BCWE

Active - IC DRAM DDR4 16 Gb 3200 Mbps
Description:
IC DRAM DDR4 16 Gb 3200 Mbps
K4AAG165WB-BCWE Specification
Product Attribute
Attribute Value
Memory Organization
4G x 4
Memory Interface
Parallel
Write Cycle Time - Word, Page
-
Operating Temperature
0 ~ 85 ℃
Mounting Type
Surface Mount
Supplier Device Package
78 FBGA
K4AAG165WB-BCWE Description
The Samsung Semiconductor K4AAG165WB-BCWE is a high-performance DRAM (Dynamic Random Access Memory) module designed for various applications, including mobile devices, consumer electronics, and computing systems. Below is a detailed overview of its specifications and features.
### Overview
The K4AAG165WB-BCWE is a DDR4 (Double Data Rate 4) SDRAM (Synchronous Dynamic Random Access Memory) chip that offers improved performance and efficiency compared to its predecessors. It is designed to meet the demands of modern computing environments, providing high-speed data transfer rates and low power consumption.
### Key Specifications
1. Memory Type: DDR4 SDRAM
2. Density: 16 Gb (Gigabits)
3. Organization: x4 (4 bits per chip)
4. Package Type: FBGA (Fine Ball Grid Array)
5. Package Size: 78-ball package
6. Operating Voltage: 1.2V (nominal)
7. Data Rate: Up to 2400 MT/s (Mega Transfers per second)
8. Latency: CL=17 (CAS Latency)
9. Temperature Range: Commercial (0°C to 85°C) and Industrial (-40°C to 95°C)
10. Refresh Cycle Time: 64 ms
11. I/O Interface: Differential signaling
12. Burst Length: 8 (BL=8)
13. Bank Groups: 2 bank groups
14. Banks: 16 banks
15. Row Address: 16K rows
16. Column Address: 512 columns
### Features
- High Performance: The K4AAG165WB-BCWE supports high-speed data rates, making it suitable for applications that require fast memory access and high bandwidth.
- Low Power Consumption: Operating at a voltage of 1.2V, this DRAM chip is designed to consume less power, which is crucial for battery-operated devices and energy-efficient systems.
- Scalability: The chip%27s architecture allows for easy integration into various memory configurations, making it versatile for different applications.
- Reliability: Samsung%27s advanced manufacturing processes ensure high reliability and durability, which is essential for critical applications.
- Compatibility: The K4AAG165WB-BCWE is compatible with a wide range of DDR4 memory controllers, making it easy to integrate into existing systems.
### Applications
The K4AAG165WB-BCWE is suitable for a variety of applications, including:
- Mobile Devices: Smartphones and tablets that require high-speed memory for multitasking and gaming.
- Consumer Electronics: Smart TVs, gaming consoles, and other devices that benefit from fast data processing.
- Computing Systems: Laptops and desktops that require efficient memory for enhanced performance in computing tasks.
- Networking Equipment: Routers and switches that need reliable memory for data handling and processing.
### Conclusion
The Samsung Semiconductor K4AAG165WB-BCWE is a robust and efficient DDR4 memory solution that meets the demands of modern electronic devices. With its high performance, low power consumption, and versatility, it is an ideal choice for manufacturers looking to enhance the capabilities of their products. Whether in mobile devices, consumer electronics, or computing systems, this DRAM chip provides the reliability and speed necessary for today%27s technology landscape.
K4AAG165WB-BCWE Stock: 18930
5.0 / 5.0

2021-12-23 03:52
All right. Received within time

2021-02-06 23:42
Received perfectly. Welded a unit on its corresponding printed circuit board working perfectly to replace a faulty unit on an Arduino Nano plate.

2021-08-04 23:28
2 weeks for delivery. The chips work fine

2021-11-04 06:37
Corresponds to my use

2021-07-11 09:01
Tested, works as expected.