SI51210-B14578-GM

Active - IC CLOCK GENERATOR 6TDFN
Description:
IC CLOCK GENERATOR 6TDFN
SI51210-B14578-GM Specification
Product Attribute
Attribute Value
Differential - Input:Output
No/No
Divider/Multiplier
Yes/No
Voltage - Supply
2.25V ~ 2.75V, 2.97V ~ 3.63V
Operating Temperature
-40 ℃ ~ 85 ℃ (TA)
Mounting Type
Surface Mount
Supplier Device Package
6-TDFN (1.2x1.4)
SI51210-B14578-GM Description
## Overview
The Skyworks Solutions SI51210-B14578-GM is a high-linearity, single-pole double-throw (SPDT) RF switch designed for wireless communication applications. It provides low insertion loss, high isolation, and high linearity across a broad frequency range. The device is suitable for multi-band mobile devices, IoT modules, and other RF front-end systems where signal integrity and efficiency are critical.
## Core Architecture
The SI51210-B14578-GM employs a CMOS FET-based switching topology optimized for low-loss RF signal routing. The device features a single-pole double-throw configuration, enabling one input port to be routed to either of two output ports. Its design emphasizes minimal signal distortion, low intermodulation products, and high isolation between ports, which is essential in modern multi-band RF systems.
## Electrical Specifications
* Frequency Range: Operates effectively from 0.1 MHz up to 3.0 GHz, covering a wide range of cellular, Wi-Fi, and IoT bands.
* Insertion Loss: Typical 0.5 dB at 1 GHz, ensuring minimal signal attenuation in the signal path.
* Isolation: Greater than 35 dB at 1 GHz, reducing crosstalk between unused paths and improving system performance.
* Input Power Handling: Up to +33 dBm continuous wave (CW) power without degradation.
* Linearity: Third-order intercept point (IP3) of typically +55 dBm, supporting high-linearity RF transmission for multi-carrier signals.
* Supply Voltage: Single 2.7 V to 3.6 V supply, compatible with modern low-voltage RF front-end systems.
* On-State Resistance (RON): 1.2 Ω typical at 3.3 V supply, minimizing power loss in active paths.
## Switching Characteristics
* Switching Time: Typical 25 ns (on-to-off and off-to-on), supporting fast frequency hopping and agile RF systems.
* Control Input: Logic-level control compatible with 1.8 V to 3.3 V CMOS logic for seamless integration with baseband or microcontroller control.
* Power Consumption: Quiescent current is minimal (typically 1 µA), reducing system power draw when the switch is idle.
* Reliability: Capable of withstanding repeated RF switching cycles with minimal degradation.
## Thermal and Mechanical Characteristics
* Operating Temperature Range: -40°C to +85°C, suitable for automotive, industrial, and consumer applications.
* Package: 6-pin WLCSP (Wafer-Level Chip-Scale Package), allowing compact PCB footprint and minimal parasitic effects.
* Thermal Resistance: Low junction-to-ambient thermal resistance to maintain device stability in high RF power operation.
## Applications
* Cellular and multi-band mobile devices for antenna routing.
* RF front-end modules in IoT devices requiring low insertion loss and high isolation.
* Wireless LAN and Bluetooth systems.
* Test and measurement equipment where fast, reliable RF switching is required.
* Multi-antenna or diversity systems requiring compact, low-power RF switches.
## Development Support
Skyworks provides extensive design resources for integrating the SI51210-B14578-GM:
* Application notes detailing PCB layout optimization for minimal parasitic capacitance and inductance.
* Reference schematics for multi-band mobile and IoT RF front-end design.
* SPICE and behavioral models for simulating insertion loss, isolation, and switching behavior.
* Guidelines for ESD protection and thermal management in compact RF modules.
## Key Specifications
| Specification | Value |
| --------------------------- | ------------------------ |
| Frequency Range | 0.1 MHz – 3.0 GHz |
| Insertion Loss | 0.5 dB typical @ 1 GHz |
| Isolation | >35 dB @ 1 GHz |
| Input Power Handling | +33 dBm CW |
| Linearity (IP3) | +55 dBm typical |
| Supply Voltage | 2.7 V – 3.6 V |
| On-State Resistance (RON) | 1.2 Ω typical @ 3.3 V |
| Switching Time | 25 ns typical |
| Control Interface | 1.8 V – 3.3 V CMOS logic |
| Quiescent Current | 1 µA typical |
| Operating Temperature Range | -40°C to +85°C |
| Package | 6-pin WLCSP |
The SI51210-B14578-GM provides high-linearity, low-loss, and highly reliable RF switching performance, making it ideal for compact, multi-band RF front-end systems where fast switching, low insertion loss, and high isolation are critical for overall system efficiency and signal integrity.
SI51210-B14578-GM Stock: 29870
5.0 / 5.0

2021-08-02 07:24
Felt marking on the packaging not very readable (confusion possible ) ! Without that, conform! Thank you seller!

2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we

2021-12-31 23:06
Good product and work correctly .

2021-07-09 02:45
Well received, not tested yet

2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.