1N1399
Active - DIODE GEN PURP 200V 100A DO8
Description:
DIODE GEN PURP 200V 100A DO8
1N1399 Specification
Product Attribute
Attribute Value
Voltage - DC Reverse (Vr) (Max)
200 V
Current - Average Rectified (Io)
100A
Voltage - Forward (Vf) (Max) @ If
1.2 V @ 200 A
Speed
Standard Recovery >500ns, >200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
50 μA @ 200 V
Package / Case
DO-205AA, DO-8, Stud
Supplier Device Package
DO-8
Operating Temperature - Junction
-65 ℃ ~ 200 ℃
1N1399 Stock: 14520
5.0 / 5.0
2023-04-23 01:09
Thank you seller! On April 6, ordered, received the 22nd. New, did not experience.
2023-05-05 06:35
Well packaged and neatly received supper thank you
2023-04-26 11:45
It seems to be good yet I haven't tested
2023-04-22 09:31
Excellent quality transistor, well robust, product met
My expectation, good cost benefit. Product came well packed.
Seller sent the product very fast.
Recommend this seller can buy quietly.
2023-04-27 03:17
Arrived as per photo thank you.
Germany
