1N3293
Active - DIODE GEN PURP 600V 100A DO8
Description:
DIODE GEN PURP 600V 100A DO8
1N3293 Specification
Product Attribute
Attribute Value
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
100A
Voltage - Forward (Vf) (Max) @ If
1.2 V @ 200 A
Speed
Standard Recovery >500ns, >200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
50 μA @ 600 V
Package / Case
DO-205AA, DO-8, Stud
Supplier Device Package
DO-8
Operating Temperature - Junction
-65 ℃ ~ 200 ℃
1N3293 Stock: 22720
5.0 / 5.0
2023-04-04 05:08
Neat delivery good service recommended
2023-04-06 10:46
Very good seller very fast product well packed thank you also
2023-04-05 07:51
Top as the description
2023-04-06 01:07
I needed the MOSFETs for a RGBW board. After a year everything is still OK
2023-04-05 14:52
Excellent product, price and shipping. Excellent seller !!! Thank you.
Netherlands
