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1N645

Active Icon Active - DIODE GEN PURP 225V 400MA DO35
1N645
1N645
Solid State
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Description:
DIODE GEN PURP 225V 400MA DO35
 
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1N645 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Box
Product Status
Active
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
225 V
Current - Average Rectified (Io)
400mA
Voltage - Forward (Vf) (Max) @ If
1 V @ 400 mA
Speed
Standard Recovery >500ns, >200mA (Io)
Reverse Recovery Time (trr)
-
Current - Reverse Leakage @ Vr
200 nA @ 225 V
Capacitance @ Vr, F
15pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AH, DO-35, Axial
Supplier Device Package
DO-35
Operating Temperature - Junction
-65 ℃ ~ 175 ℃

1N645 Description

The 1N645 is a silicon rectifier diode manufactured by Microchip Technology, designed for applications that require reliable rectification with moderate current and voltage ratings. This diode is part of the 1N6xx series, which is well-known for its performance in various electronic applications, particularly in power supply circuits, battery chargers, and other rectification tasks. Below is a comprehensive overview of the 1N645, including its specifications, parameters, and applications.

### Overview

The 1N645 is engineered to handle a maximum reverse voltage of 50 volts and a forward current of up to 3 amperes. It is designed to provide efficient rectification in a variety of applications, making it a versatile choice for engineers and designers. The diode features a robust construction that ensures reliability and longevity in various operating conditions.

### Key Specifications

1. Maximum Reverse Voltage (VR): 50V
- This is the maximum voltage that the diode can withstand in the reverse direction without entering breakdown. It is suitable for applications where the reverse voltage does not exceed this limit.

2. Forward Current (IF): 3A
- The maximum continuous forward current that the diode can conduct. This rating allows the diode to be used in applications with significant current demands.

3. Forward Voltage Drop (VF): Typically 0.7V at 3A
- The voltage drop across the diode when it is in the forward-biased condition. This parameter is important for calculating power loss in the diode during operation.

4. Reverse Leakage Current (IR): Typically 5mA at 25°C
- The current that flows through the diode when it is reverse-biased. A lower reverse leakage current is desirable for minimizing power loss in applications.

5. Operating Temperature Range: -65°C to +150°C
- The diode can operate effectively within this temperature range, making it suitable for various environmental conditions, including extreme temperatures.

6. Junction Capacitance (CJ): Typically 30pF
- This parameter indicates the capacitance between the anode and cathode when the diode is reverse-biased, which can affect the diode%27s performance in high-frequency applications.

7. Package Type: DO-41
- The 1N645 is available in a DO-41 package, which is an axial-lead package that allows for easy mounting on printed circuit boards (PCBs) and provides good thermal dissipation.

8. Surge Current Rating (IFSM): 100A
- The maximum surge current that the diode can withstand for a short duration without damage. This is particularly important in applications where transient currents may occur.

### Applications

The 1N645 diode is used in a variety of applications, including:

- Power Supply Circuits: It is commonly used in power supply circuits for rectification, converting AC voltage to DC voltage efficiently.
- Battery Chargers: The diode is utilized in battery charging circuits to prevent reverse current flow, ensuring that batteries are charged effectively and safely.
- Voltage Clamping: It can be employed for voltage clamping in circuits to protect sensitive components from voltage spikes and transients.
- General Rectification: The diode is suitable for general-purpose rectification in various electronic devices, including consumer electronics and industrial equipment.

### Advantages

- High Surge Current Capability: The ability to handle surge currents up to 100A makes it suitable for applications where transient conditions may occur.
- Robust Design: The DO-41 package provides durability and excellent thermal performance, ensuring reliable operation over time.
- Versatile Applications: The diode%27s specifications make it suitable for a wide range of applications, from low-power consumer devices to high-power industrial systems.

### Conclusion

The 1N645 is a reliable and efficient silicon rectifier diode that plays a crucial role in various electronic applications. Its moderate current and voltage ratings, combined with its robust design, make it an excellent choice for power supply and rectification needs. Whether in battery chargers, power supplies, or general rectification applications, the 1N645 provides dependable performance and durability. Microchip Technology%27s commitment to quality ensures that this diode meets the rigorous demands of modern electronic applications, providing engineers and designers with a reliable solution for their rectification needs.

1N645 Stock: 5180

History Price
$1.89000
Certificates
5.0 / 5.0
review stars
Author Icon
Jacek Kaczor
Location Icon Poland
5 stars
2023-01-24 12:57
Thank you for fast shipping. Recommend salesman.
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Gabriela Pérez
Location Icon Spain
5 stars
2023-02-05 12:39
Product received. Very slow shipping.
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Felipe Pacheco
Location Icon Spain
5 stars
2023-02-05 12:34
All good. Well packaged. Good business.
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Emilia Weber
Location Icon Germany
5 stars
2023-02-04 01:56
Good quality in the work did not check the packaging good thanks
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Giulio Gallo
Location Icon Italy
5 stars
2023-02-02 02:37
It's okay. I hope they are really 25A as stated.

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