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Home  /  Discrete Semiconductors  /  Transistors - Bipolar (BJT) - Single  /  Solid State MJ11016

MJ11016

Active Icon Active - TRANS NPN DARL 120V 30A TO3
MJ11016
MJ11016
Solid State
Manufacturer:
Mfr Part #
Datasheet:
Description:
TRANS NPN DARL 120V 30A TO3
 
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MJ11016 Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Bulk
Product Status
Active
Transistor Type
NPN - Darlington
Current - Collector (Ic) (Max)
30 A
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
4V @ 300mA, 30A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 20A, 5V
Power - Max
200 W
Frequency - Transition
-
Operating Temperature
-65 ℃ ~ 200 ℃ (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Supplier Device Package
TO-3

MJ11016 Description

Here%27s a detailed overview of the Solid State MJ11016:

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### Solid State MJ11016: Comprehensive Overview

Solid State MJ11016 is a high-performance NPN power transistor designed for demanding electronic applications. This device is commonly used in audio amplifiers, power amplifiers, and other high-current applications due to its robust characteristics and reliability. The MJ11016 is well-regarded for its high gain, durability, and efficient performance under various operating conditions.

#### Key Specifications:

1. General Characteristics:
- Type: NPN Power Transistor
- Package Type: TO-3 (metal can with three leads)
- Mounting Type: Through-hole

2. Electrical Characteristics:
- Collector-Emitter Voltage (Vceo): 120V
- Collector-Base Voltage (Vcbo): 120V
- Emitter-Base Voltage (Vebo): 5V
- Collector Current (Ic): 15A
- Collector Power Dissipation (Pc): 100W (at a case temperature of 25°C)
- Total Power Dissipation (Ptot): 250W (with proper heat sinking)

3. Thermal Characteristics:
- Thermal Resistance, Junction-to-Case (Rθjc): 1.0°C/W
- Thermal Resistance, Junction-to-Ambient (Rθja): 60°C/W (with a heat sink)
- Maximum Junction Temperature (Tj): 200°C
- Storage Temperature Range (Tstg): -65°C to +200°C

4. Performance Parameters:
- DC Current Gain (hFE): 15 to 60 (at Ic = 4A and Vce = 10V)
- Transition Frequency (fT): 4MHz (at Vce = 10V and Ic = 4A)
- Switching Speed: Moderate; suitable for high-power applications but not for high-frequency switching

5. Electrical Characteristics at Specific Conditions:
- Collector-Emitter Saturation Voltage (Vce(sat)): Typically 2V at Ic = 8A
- Base-Emitter Saturation Voltage (Vbe(sat)): Typically 2V at Ic = 8A
- Safe Operating Area (SOA): Provides reliable performance over the full operating range with proper heat dissipation

#### Applications:

- Audio Amplifiers: Used in high-power audio amplification due to its ability to handle significant current and power.
- Power Amplifiers: Ideal for use in RF and other power amplifier designs.
- Switching Circuits: Utilized in power switching applications where high current handling is required.
- Power Regulation: Can be used in voltage regulators and power supplies to manage high power levels.

#### Features and Benefits:

- High Power Handling: Capable of dissipating up to 250W with adequate heat sinking, making it suitable for high-power applications.
- Robust Construction: The TO-3 package ensures durability and thermal performance.
- High Gain and Efficiency: Provides high current gain (hFE) and efficient operation, crucial for audio and power amplification.

#### Thermal Management:

Proper heat dissipation is essential for the MJ11016 to maintain reliability and performance. Adequate heat sinks should be used to ensure that the transistor operates within its safe thermal limits. The junction-to-case and junction-to-ambient thermal resistances indicate the need for efficient cooling mechanisms to handle the power dissipation.

#### Summary:

The Solid State MJ11016 is a versatile and reliable power transistor suitable for various high-current and high-power applications. Its robust specifications, including high voltage and current ratings, along with good thermal management capabilities, make it a preferred choice in audio and power amplification circuits. Proper thermal management and adherence to specified operating conditions will ensure optimal performance and longevity of this component.

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This detailed description covers the essential specifications and applications of the Solid State MJ11016 transistor, emphasizing its suitability for high-power electronic applications.

MJ11016 Stock: 30580

History Price
$10.00000
Certificates
5.0 / 5.0
review stars
Author Icon
Roberta Almeida Silva
Location Icon Brazil
5 stars
2023-04-21 08:58
The supersonic delivery.... Thank you.... Everything perfect.... With components are reliable as described. .. Too happy with the purchase with product with seller and the store.. All of congratulations
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Felix Weber
Location Icon Germany
5 stars
2023-04-23 01:09
Thank you seller! On April 6, ordered, received the 22nd. New, did not experience.
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Jasmijn van der Wal
Location Icon Netherlands
5 stars
2023-05-05 06:35
Well packaged and neatly received supper thank you
Author Icon
Yasmim Almeida Jr.
Location Icon Brazil
5 stars
2023-04-26 11:45
It seems to be good yet I haven't tested
Author Icon
Xanderson Silva Neto
Location Icon Brazil
5 stars
2023-04-22 09:31
Excellent quality transistor, well robust, product met
My expectation, good cost benefit. Product came well packed.
Seller sent the product very fast.
Recommend this seller can buy quietly.

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