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Home  /  Discrete Semiconductors  /  Transistors - FETs, MOSFETs - RF  /  STMicroelectronics PD20010S-E

PD20010S-E

Active Icon Obsolete - TRANS RF N-CH FET POWERSO-10RF
PD20010S-E
PD20010S-E
STMicroelectronics
Manufacturer:
Mfr Part #
Datasheet:
Description:
TRANS RF N-CH FET POWERSO-10RF
 
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PD20010S-E Specification

Product Attribute
Attribute Value
Manufacturer
Series
-
Packaging
Tube
Product Status
Obsolete
Transistor Type
LDMOS
Frequency
2GHz
Gain
11dB
Voltage - Test
13.6 V
Current Rating (Amps)
5A
Noise Figure
-
Current - Test
150 mA
Power - Output
10W
Voltage - Rated
40 V
Mounting Type
-
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Supplier Device Package
PowerSO-10RF (Straight Lead)

PD20010S-E Stock: 28640

History Price
Obsolete
Certificates
5.0 / 5.0
review stars
Author Icon
Maria Luiza
Location Icon Brazil
5 stars
2023-03-09 09:45
Very, very fast delivery in Brazil
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Bruno Rossi
Location Icon Italy
5 stars
2023-03-09 04:31
Great product and great seller
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Heloísa Lima
Location Icon Brazil
5 stars
2023-03-09 05:02
Great seller, I recommend to the whole
Author Icon
Madeleine Hubert
Location Icon France
5 stars
2023-03-10 14:16
Item as described, all good
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Alessandra Rizzo
Location Icon Italy
5 stars
2023-03-11 15:35
Good-
Ic Max -100 mA.
Vce Max -45V
Vebo Max -5V
Vbe(Sat) -0.7V (Ic=-10mA, Ib=-0.5mA)
Shipping for Italy in 17 days.
I recommend the purchase

PD20010S-E Related Parts

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PD20010S-E
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PD20015S-E
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