STD5N65M6
Active - MOSFET N-CH 650V DPAK
Description:
MOSFET N-CH 650V DPAK
STD5N65M6 Specification
Product Attribute
Attribute Value
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25℃
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
3.75V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 100 V
Power Dissipation (Max)
45W (Tc)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
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Spain
