VNN3NV04PTR-E

Active - IC PWR DRIVER N-CHAN 1:1 SOT223
Description:
IC PWR DRIVER N-CHAN 1:1 SOT223
VNN3NV04PTR-E Specification
Product Attribute
Attribute Value
Series
OMNIFET II, VIPower
Packaging
Tape & Reel (TR)
Switch Type
General Purpose
Output Configuration
Low Side
Voltage - Supply (Vcc/Vdd)
Not Required
Current - Output (Max)
3.5A
Rds On (Typ)
120mOhm (Max)
Fault Protection
Current Limiting (Fixed), Over Temperature, Over Voltage
Operating Temperature
-40 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
VNN3NV04PTR-E Description
The STMicroelectronics VNN3NV04PTR-E is a high-performance N-channel MOSFET driver designed for driving high-side and low-side N-channel MOSFETs in various applications, including automotive, industrial, and consumer electronics. This device is particularly well-suited for applications requiring efficient switching and robust performance.
### Key Features
1. High Voltage Capability: The VNN3NV04PTR-E can operate at a maximum supply voltage of 40V, making it suitable for a wide range of applications that require high voltage operation.
2. High Current Drive: The driver can provide a peak output current of up to 3A, allowing it to drive large MOSFETs effectively. This capability is essential for applications that require fast switching and high efficiency.
3. Low On-Resistance: The device features a low on-resistance, which minimizes power losses during operation. This characteristic is crucial for improving the overall efficiency of the system.
4. Integrated Protection Features: The VNN3NV04PTR-E includes several built-in protection features, such as:
- Thermal Shutdown: Protects the device from overheating by shutting down the driver when the junction temperature exceeds a specified limit.
- Under-Voltage Lockout (UVLO): Prevents the driver from operating at voltages below a certain threshold, ensuring reliable operation.
5. Fast Switching Speed: The driver is designed for fast switching, which is essential for applications that require high-frequency operation. This feature helps reduce switching losses and improve overall efficiency.
6. Compact Package: The VNN3NV04PTR-E is available in a compact PowerSO-8 package, making it suitable for space-constrained applications.
7. Logic Level Compatibility: The device is compatible with standard logic levels, allowing it to be easily interfaced with microcontrollers and other digital logic devices.
### Specifications
- Supply Voltage (Vcc): 4.5V to 40V
- Output Current (Iout): Up to 3A (peak)
- On-Resistance (Rds(on)): Typically 0.5 Ω
- Input Voltage Range (Vin): 0V to Vcc
- Operating Temperature Range: -40°C to +150°C
- Thermal Resistance (junction to case): 30 °C/W
- Switching Frequency: Up to 100 kHz
- Protection Features: Thermal shutdown, under-voltage lockout
### Applications
The VNN3NV04PTR-E is widely used in various applications, including:
- Automotive: For driving loads such as motors, solenoids, and relays in automotive systems.
- Industrial Automation: In control systems for driving actuators, sensors, and other devices.
- Consumer Electronics: For power management in devices such as power supplies, battery chargers, and LED drivers.
### Conclusion
The STMicroelectronics VNN3NV04PTR-E is a versatile and efficient N-channel MOSFET driver that offers high voltage and current capabilities, integrated protection features, and fast switching speeds. Its compatibility with standard logic levels and compact package design make it an excellent choice for a wide range of applications in automotive, industrial, and consumer electronics. With its robust performance and reliability, the VNN3NV04PTR-E is well-suited for demanding environments and applications.