HS3JB
Active - DIODE GEN PURP 600V 3A DO214AA
Description:
DIODE GEN PURP 600V 3A DO214AA
HS3JB Specification
Product Attribute
Attribute Value
Packaging
Tape & Reel (TR)
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
3A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 3 A
Speed
Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr)
75 ns
Current - Reverse Leakage @ Vr
10 μA @ 600 V
Capacitance @ Vr, F
50pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Supplier Device Package
DO-214AA (SMB)
Operating Temperature - Junction
-55 ℃ ~ 150 ℃
HS3JB Stock: 16840
5.0 / 5.0
2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we
2021-12-31 23:06
Good product and work correctly .
2021-07-09 02:45
Well received, not tested yet
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
Poland
