CSD13302W

Active - MOSFET N-CH 12V 1.6A 4DSBGA
Description:
MOSFET N-CH 12V 1.6A 4DSBGA
CSD13302W Specification
Product Attribute
Attribute Value
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25℃
1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
17.1mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id
1.3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
862 pF @ 6 V
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55 ℃ ~ 150 ℃ (TJ)
Mounting Type
Surface Mount
Supplier Device Package
4-DSBGA (1x1)
Package / Case
4-UFBGA, DSBGA
CSD13302W Description
The Texas Instruments CSD13302W is a highly integrated power management device designed for various applications, including portable electronics, battery management systems, and power supply circuits. This device is particularly known for its efficiency, compact size, and versatility in handling different power requirements.
### Overview
The CSD13302W is a dual N-channel MOSFET that is optimized for low on-resistance and high-speed switching. It is commonly used in applications such as synchronous buck converters, load switches, and power distribution. The device is housed in a compact 2mm x 2mm WSON package, making it suitable for space-constrained designs.
### Key Features
1. Dual N-Channel MOSFETs: The CSD13302W integrates two N-channel MOSFETs, which can be used in various configurations to optimize power delivery and efficiency.
2. Low On-Resistance (RDS(on)): The device features a low on-resistance, which minimizes conduction losses and improves overall efficiency. This is particularly important in battery-powered applications where power conservation is critical.
3. High-Speed Switching: The CSD13302W is designed for fast switching applications, allowing for efficient operation in high-frequency power conversion circuits.
4. Thermal Performance: The device is designed to handle significant thermal loads, ensuring reliable operation even under high current conditions.
5. Compact Package: The WSON package allows for a small footprint on the PCB, making it ideal for applications where space is at a premium.
### Specifications
Here are the detailed specifications of the Texas Instruments CSD13302W:
- Maximum Drain-Source Voltage (VDS): 20V
- Maximum Gate-Source Voltage (VGS): ±20V
- Continuous Drain Current (ID):
- 10A (at 25°C)
- 6.5A (at 70°C)
- Pulsed Drain Current (ID, pulsed): 30A
- On-Resistance (RDS(on)):
- 5.5 mΩ (VGS = 10V)
- 7.5 mΩ (VGS = 4.5V)
- Gate Charge (Qg):
- 10 nC (typical at VGS = 10V)
- Input Capacitance (Ciss): 1500 pF (typical)
- Output Capacitance (Coss): 200 pF (typical)
- Reverse Transfer Capacitance (Crss): 50 pF (typical)
- Thermal Resistance (Junction to Ambient, RθJA): 50°C/W
- Operating Temperature Range: -55°C to 150°C
### Applications
The CSD13302W is suitable for a wide range of applications, including:
- Synchronous Buck Converters: Used in power supply circuits to efficiently convert higher voltages to lower voltages.
- Load Switches: Ideal for controlling power to various components in portable devices.
- Battery Management Systems: Helps in managing the charging and discharging of batteries in portable electronics.
- Power Distribution: Used in systems that require efficient power distribution to multiple loads.
### Conclusion
The Texas Instruments CSD13302W is a versatile and efficient dual N-channel MOSFET that meets the demands of modern power management applications. With its low on-resistance, high-speed switching capabilities, and compact package, it is an excellent choice for designers looking to optimize performance in space-constrained environments. Whether used in battery-powered devices or power supply circuits, the CSD13302W provides reliable and efficient power management solutions.
CSD13302W Stock: 25270
5.0 / 5.0

2021-06-01 09:35
Very good I can only recommend

2021-04-17 07:13
Very satisfied, good seller.

2021-07-09 20:10
Still not auditioned but very fast

2021-08-02 07:24
Felt marking on the packaging not very readable (confusion possible ) ! Without that, conform! Thank you seller!

2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we