SS32HE3/57T

## General Description

The Vishay SS32HE3/57T is a surface-mount Schottky barrier rectifier designed for high-efficiency low-voltage power applications. It belongs to the SS32 series of Schottky diodes, optimized for fast switching, low forward voltage drop, and high current handling. Its primary use is in rectification, reverse-polarity protection, and transient voltage suppression in industrial, automotive, and consumer electronics. The diode’s Schottky barrier construction ensures low conduction losses, minimal heat generation, and high efficiency in low-voltage power systems. The SMC (DO-214AB) package supports automated assembly and compact PCB layouts.

The SS32HE3/57T operates in unidirectional mode, allowing efficient rectification while blocking reverse voltage up to its rated maximum. The Schottky structure provides negligible reverse recovery time, making it suitable for high-frequency switching applications. The device supports high surge currents for short durations, making it robust against inrush currents or transient spikes.

## Electrical Characteristics

* Maximum Repetitive Reverse Voltage (VRRM): 20 V
* Maximum Average Forward Current (IF(AV)): 3 A
* Non-Repetitive Peak Surge Current (IFSM): 100 A, 8.3 ms half-sine pulse
* Forward Voltage Drop (VF): Typical 0.55 V, maximum 0.62 V at 3 A
* Reverse Leakage Current (IR): Maximum 1 mA at rated VR
* Junction Capacitance (Cj): Typical 110 pF, supporting fast switching
* Reverse Recovery Time (trr): Negligible due to Schottky barrier
* Operating Junction Temperature (Tj): -55°C to +150°C
* Storage Temperature (Tstg): -55°C to +150°C

The combination of low forward voltage drop and fast switching characteristics minimizes conduction and switching losses, improving overall efficiency in power supply and protection circuits. Low leakage ensures minimal standby power consumption, critical for battery-powered applications.

## Package and Mechanical Data

* Package Type: SMC (DO-214AB)
* Mounting Type: Surface-mount, compatible with reflow soldering
* Polarity Marking: Cathode marked with stripe
* Weight: Approximately 80 mg
* Dimensions: Length 4.5 mm, width 6.5 mm, height 2.5 mm
* Mechanical Robustness: Suitable for automated handling, pick-and-place, and thermal cycling

The SMC package allows efficient thermal conduction through PCB pads, enabling stable operation at rated current. Its compact footprint allows integration into high-density designs.

## Thermal Characteristics

* Thermal Resistance, Junction to Ambient (RθJA): 75 K/W typical in free air
* Thermal Resistance, Junction to Lead (RθJL): 20 K/W typical
* Power Dissipation (Pd): 2 W under proper PCB thermal conditions
* Derating: Required at elevated ambient temperatures to maintain junction temperature below 150°C

PCB layout with adequate copper area for anode and cathode pads enhances heat dissipation and ensures reliable performance under continuous high-current operation.

## Applications

* Low-voltage rectification in DC-DC converters and power supplies
* Reverse polarity protection for automotive, industrial, and battery-powered devices
* Freewheeling diodes in inductive load circuits such as relays and motors
* Fast recovery rectification in high-frequency switching regulators
* Transient voltage protection for sensitive electronics

The SS32HE3/57T is particularly effective in circuits requiring high efficiency, fast switching, and reliable thermal performance.

## Reliability and Performance Considerations

* Long-Term Stability: Maintains consistent forward voltage under rated conditions over extended use
* Low Conduction Losses: Reduced VF minimizes power loss and heat generation
* High Surge Capability: Tolerates brief high-current transients
* Thermal Management: Adequate PCB copper area required to maintain junction temperature below maximum
* Low Leakage Current: Ensures energy efficiency in standby operation
* Fast Switching: Ideal for high-frequency rectification with minimal losses

## Electrical Characteristics Summary Table

| Parameter | Value | Test Condition |
| ----------------------------------- | -------------------------- | -------------------- |
| Maximum Reverse Voltage (VRRM) | 20 V | - |
| Average Forward Current (IF(AV)) | 3 A | Tc = 100°C |
| Non-Repetitive Surge Current (IFSM) | 100 A | 8.3 ms half-sine |
| Forward Voltage (VF) | 0.55 V typical, 0.62 V max | IF = 3 A |
| Reverse Current (IR) | 1 mA max | VR = 20 V, TJ = 25°C |
| Junction Capacitance (Cj) | 110 pF typical | VR = 4 V, f = 1 MHz |
| Operating Temperature (Tj) | -55°C to +150°C | - |
| Storage Temperature (Tstg) | -55°C to +150°C | - |

## Key Advantages

* Low forward voltage reduces conduction losses and improves efficiency
* High surge current capability tolerates transient events
* Negligible reverse recovery for high-frequency applications
* Compact SMC package suitable for dense PCB designs
* Wide operating temperature range for industrial and automotive use
* Reliable rectification and protection for compact power circuits

The Vishay SS32HE3/57T is a versatile Schottky diode providing efficient, fast, and reliable performance for modern power management, protection, and rectification applications. Its combination of low forward voltage, high surge tolerance, and compact packaging makes it ideal for automotive, industrial, and consumer electronics.