C6D08065E
Active - DIODE SIL CARB 650V 29A TO252-2
Description:
DIODE SIL CARB 650V 29A TO252-2
C6D08065E Specification
Product Attribute
Attribute Value
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
29A
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 8 A
Speed
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
40 μA @ 650 V
Capacitance @ Vr, F
518pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252-2
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
C6D08065E Stock: 29540
5.0 / 5.0
2021-08-12 12:06
IGBT transistors not detected SA for testerach beside plus t7-h, in tescie for przelaczanie with-12V for E plus zarowka powered + 12V for C triggered finger with Plus, zalancza with-wylancza. Very fast wysylka, fast delivery, product good jakosci, very we
2021-12-31 23:06
Good product and work correctly .
2021-07-09 02:45
Well received, not tested yet
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
Poland
