CSD01060E
Active - DIODE SIL CARB 600V 4A TO252-2
Description:
DIODE SIL CARB 600V 4A TO252-2
CSD01060E Specification
Product Attribute
Attribute Value
Diode Type
Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)
600 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.8 V @ 1 A
Speed
No Recovery Time >500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
100 μA @ 600 V
Capacitance @ Vr, F
80pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252-2
Operating Temperature - Junction
-55 ℃ ~ 175 ℃
CSD01060E Stock: 9550
5.0 / 5.0
2021-12-03 00:22
I order 10pcs. Now test three chips and two was ID 0x441, wich is STM32F412, not STM32F407. I am wery disapointed.
2021-12-27 06:22
The goods are very satisfied, the seller Thank you very much.
2021-06-10 07:32
Recu in 89 days, strip, to test
2021-11-23 06:50
All ok, thank you!
2021-12-23 03:52
All right. Received within time
Finland
